| AVS 45th International Symposium | |
| Manufacturing Science and Technology Group | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-MoA1 Invited Paper Green House Effect and LSI Process Technology K. Okumura, T. Ohiwa, Toshiba Corporation, Japan |
| 2:40pm | MS-MoA3 Ultra-Low-Temperature Growth of High-Integrity Silicon Oxide and Nitride Films by High-Density Plasma with Low Bombardment Energy K. Sekine, R. Kaihara, Y. Saito, M. Hirayama, T. Ohmi, Tohoku University, Japan |
| 3:00pm | MS-MoA4 Low-Temperature Large-Grain As-Deposited Poly-Si Formation by Microwave-Excited PECVD Using SiH@sub 4@/Xe W. Shindo, S. Sakai, T. Ohmi, Tohoku University, Japan |
| 3:20pm | MS-MoA5 Balanced Electron Drift Magnerton Plasma Source for Uniform SiO@sub 2@ Etching R. Kaihara, T. Ohmi, Tohoku University, Japan, H. Komeda, Sharp Corp., Japan, Y. Hirayama, Tokyo Electron Yamanashi Ltd., Japan, M. Hirayama, Tohoku University, Japan |
| 3:40pm | MS-MoA6 Influence of Wafer Back Surface Finish on Dry Etching Characteristics S. Muramatsu, K. Ando, H. Nanbu, H. Miyamoto, T. Kitano, NEC Corporation, Japan |
| 4:00pm | MS-MoA7 Precise Control of Gas Ratio in Process Chamber Y. Shirai, O. Nakamura, Tohoku University, Japan, N. Ikeda, R. Dohi, Fujikin Inc., Japan, T. Ohmi, Tohoku University, Japan |
| 4:20pm | MS-MoA8 Clean Aluminum Oxide Formation on Surface of Aluminum Cylinder in an Ultraclean Gas Sampling System Y. Ishihara, N. Itou, T. Kimijima, T. Hirano, NIPPON SANSO Corporation, Japan |
| 4:40pm | MS-MoA9 Gradational Lead Screw Pump Development K. Ando, T.D.Giken Co., Ltd., Japan, I. Akutsu, DIAVAC Limited, Japan, T. Ohmi, Tohoku University, Japan |
| 5:00pm | MS-MoA10 Etching and Cleaning of Silicon Wafers using HF Vapor Process in the Non-Condensed Etching Regime Y.-P. Han, H. Sawin, Massachusetts Institute of Technology |