AVS 45th International Symposium
    Manufacturing Science and Technology Group Monday Sessions
       Session MS-MoA

Paper MS-MoA3
Ultra-Low-Temperature Growth of High-Integrity Silicon Oxide and Nitride Films by High-Density Plasma with Low Bombardment Energy

Monday, November 2, 1998, 2:40 pm, Room 317

Session: Contamination Free Manufacturing
Presenter: K. Sekine, Tohoku University, Japan
Authors: K. Sekine, Tohoku University, Japan
R. Kaihara, Tohoku University, Japan
Y. Saito, Tohoku University, Japan
M. Hirayama, Tohoku University, Japan
T. Ohmi, Tohoku University, Japan
Correspondent: Click to Email
As semiconductor devices are scaled down to smaller dimensions, conventional processing temperature such as 900°C will be incompatible with the desired device structure. For example, conventional high-temperature gate insulator formation process changes the impurity profile previously formed in the substrate. Moreover, it is necessary to introduce metal substrate SOI device for future high speed (>1GHz) ULSI device. To realize the metal substrate SOI device, all of manufacturing processes have to be done at below 550°C. Thus gate insulator also must be formed below 550°C. Therefore lowering growth temperature of high-integrity gate insulator is a key for future metal substrate SOI device fabrication. High integrity ultra-thin silicon oxide and nitride films can be obtained at 430°C by direct oxidation and nitridation of silicon surface. Such a low temperature oxidation and nitridation could be realized by employing newly developed high-densit!y plasma system with low ion bombardment energy less than 7eV and high plasma density above 10@super12@cm@super-3@. The electrical properties of these films are nearly the same level as those of thermally grown films. This technology becomes very promising for fabricating feature metal substrate SOI devices and silicon nitride gate MISFET.