AVS 45th International Symposium
    Manufacturing Science and Technology Group Monday Sessions
       Session MS-MoA

Paper MS-MoA5
Balanced Electron Drift Magnerton Plasma Source for Uniform SiO@sub 2@ Etching

Monday, November 2, 1998, 3:20 pm, Room 317

Session: Contamination Free Manufacturing
Presenter: R. Kaihara, Tohoku University, Japan
Authors: R. Kaihara, Tohoku University, Japan
T. Ohmi, Tohoku University, Japan
H. Komeda, Sharp Corp., Japan
Y. Hirayama, Tokyo Electron Yamanashi Ltd., Japan
M. Hirayama, Tohoku University, Japan
Correspondent: Click to Email
Magnetron etcher using dipole ring magnet has demonstrated its high selectivity with lower micro-loading effects. When parallel magnetic field is applied by dipole ring magnet, the uniformity V@sub dc@ and ion flux is degraded by ExB drift of secondary electrons on the wafer. The inherent non-uniformity causes crucial problems such a charge up damage and etching non-uniformity. In order to improve non-uniformity of V@sub DC@, gradient magnetic field has been employed in a magnetron etcher using dipole ring magnet. Almost uniform V@sub DC@ profile can be achieved by optimizing the magnetic field profile. Even though optimizing magnetic field profile is effective, there is some problems such as restricted process window and non-uniformity of ion flux. On the other hand, we applied RF(100MHz) to upper annular electrode in order to improve non-uniformity of V@sub DC@ and ion flux. The electron drifts can be balanced between the upper annular electrode and the lower electrode. Uniformity of V@sub DC@ (±4V) and ion flux (±3%) are simultaneously obtained by the balanced electron drift (BED) magnetron etcher. Excellent etching profile of 0.15µm contact hole is also obtained uniformly on 200mm wafer.