| AVS 45th International Symposium | |
| Electronic Materials and Processing Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-ThP1 Synthesis and I-V Characterization of Tin Dioxide Varistors A. Kale, University of Central Florida, R.N. Barve, College of Engineering, India, S.K. Date, National Chemical Laboratories, India, P.N. Santhosh, Indian Institute of Science, India, S. Seal, University of Central Florida |
| EM-ThP2 First Principles Calculations of Ge (100) Covered by Up to One Monolayer of Pb N. Takeuchi, Universidad Nacional Autonoma de Mexico |
| EM-ThP3 TEM Study of TiAl@sub3@ Formation C.C. Pace, University of North Carolina, Chapel Hill and MCNC, M.K. Lamvik, M.A. Ray, Microelectronics Center of North Carolina, A. McTeer, Micron Technology |
| EM-ThP4 Side-Wall Damage in a Transmission Electron Microscopy Specimen of Crystalline Silicon Prepared by a Focused-Ion-Beam N. Kato, IBM, Japan, H. Saka, Nagoya University, Japan, Y. Kohno, IBM, Japan |
| EM-ThP5 Heat-Transfer in UHV-Scanning Thermal Microscopy W. Müller-Hirsch, J.P. Parisi, M.T. Hirsch, A. Kittel, University of Oldenburg, Germany, L.V. Govor, A.Yu. Olevanov, The State University of Belarus |
| EM-ThP6 Boron Phosphide Films Grown by Solid-Source Molecular Beam Epitaxy D. Buchenauer, D. Dibble, K.F. McCarty, J.C. Lund, R.J. Anderson, M. Clift, D.L. Medlin, J.A. Schneider, Sandia National Laboratories |
| EM-ThP7 Effects of Variously Configured Magnets on the Characteristics Of Inductively Coupled Plasmas S.W. Hwang, Y.J. Lee, SungKyunKwan University, Korea, S.W. Joe, Kyoungki University, Korea, K.H. Kim, Hanyang University, Korea, G.Y. Yeom, SungKyunKwan University, Korea |
| EM-ThP8 Atomic Order and Electron Affinity at AlN(0001) Surfaces C.I. Wu, A. Kahn, Princeton University, E.S. Hellman, D.N.E. Buchanan, Bell Laboratories, Lucent Technologies |
| EM-ThP9 Enhanced Electrical Performance of Au/n-GaN Schottky Diodes by Novel Processing L. He, Northern Illinois University, X.J. Wang, University of Maryland at Baltimore County |
| EM-ThP10 W-Based Ohmic Contacts on p- and n-Type GaN X. Cao, F. Ren, S.J. Pearton, University of Florida, Gainesville, A. Zeitouny, M. Eizenberg, Technion-Israel Institute of Technology, J.C. Zolper, Office of Naval Research, C.R. Abernathy, University of Florida, Gainesville, R.J. Shul, Sandia National Laboratories, J.R. Lothian, Bell Laboratories, Lucent Technologies |
| EM-ThP11 Redistribution and Activation of Implanted S, Se, Te, Be, Zn and C in GaN R.G. Wilson, Consultant, J.M. Zavada, U.S. Army Research Office, X. Cao, S.J. Pearton, R.K. Singh, University of Florida, Gainesville, M. Fu, J.A. Sekhar, V. Sarvepalli, Mycropyretics Heaters International, R.J. Shul, J. Han, D.J. Rieger, Sandia National Laboratories, C.R. Abernathy, University of Florida, Gainesville |
| EM-ThP12 Etch Characteristics of GaN using Chemically Assisted Ion Beam Etching(CAIBE) and Its Effects on Ohmic Contact Formation to n-type GaN W.J. Lee, G.Y. Yeom, Sungkyunkwan University, Korea, J.W. Lee, Y.J. Park, T.I. Kim, Samsung Advanced Institute of Technology, Korea |
| EM-ThP13 Growth of ß-SiC Thin Films on Si (100) at Low Temperature using Ultra-high Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition J.H. Pyo, K.W. Whang, Seoul National University, Korea |
| EM-ThP14 Study of Pulsed versus Continuous Wave Plasma Deposition of Amorphous, Hydrogenated Silicon Carbide (a-Si@sub1-x@C@sub x@:H) from Silane/Methane Mixtures P.M. McCurdy, J.M. Truitt, E.R. Fisher, Colorado State University |