AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP11
Redistribution and Activation of Implanted S, Se, Te, Be, Zn and C in GaN

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Electronic Materials and Processing Poster Session
Presenter: R.G. Wilson, Consultant
Authors: R.G. Wilson, Consultant
J.M. Zavada, U.S. Army Research Office
X. Cao, University of Florida, Gainesville
S.J. Pearton, University of Florida, Gainesville
R.K. Singh, University of Florida, Gainesville
M. Fu, Mycropyretics Heaters International
J.A. Sekhar, Mycropyretics Heaters International
V. Sarvepalli, Mycropyretics Heaters International
R.J. Shul, Sandia National Laboratories
J. Han, Sandia National Laboratories
D.J. Rieger, Sandia National Laboratories
C.R. Abernathy, University of Florida, Gainesville
Correspondent: Click to Email
We have previously found that implanted Si in GaN shows minimal redistribution after annealing at 1500@degree@C, with an effective diffusion coefficient of @<=@2x10@super -13@cm@super 2.s@@super -1@ at this temperature. In this experiment, common donor (S, Se and Te) and acceptor (Be, Zn and C) dopants were implanted at a typical dose of ~5x10@super 14@cm@super -2@, with a projected range of ~1500@Ao@. Annealing was performed with AlN encapsulation on the GaN, at temperatures up to 1500@degree@C in a novel rapid thermal furnace utilizing intermetallic heating elements. After selective removal of the AlN cap in hot KOH solution, Secondary Ion Mass Spectrometry profiling was performed to measure the redistribution of the different dopant species. Effective diffusion coefficients were obtained from the broadening at full-width-half-maximum of the implanted profile.