AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP13
Growth of ß-SiC Thin Films on Si (100) at Low Temperature using Ultra-high Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Electronic Materials and Processing Poster Session
Presenter: J.H. Pyo, Seoul National University, Korea
Authors: J.H. Pyo, Seoul National University, Korea
K.W. Whang, Seoul National University, Korea
Correspondent: Click to Email
ß-SiC thin films were grown on Si (100) at low temperature using ultra-high vacuum electron cyclotron resonance chemical vapor deposition with gas mixtures of H@sub 2@ / CH@sub 4@ / SiH@sub 4@ and their properties such as crystallinity and stoichiometry were investigated. Care was taken to prepare the clean, damageless Si surface prior to the growth. In situ H@sub 2@ plasma cleaning, as well as conventional wet cleaning, were performed to confirm Si (2X1) reconstruction structure, which seemed to be an essential process to grow the ß-SiC thin films at low temperature. In addition, Si surface was Carburized with H@sub 2@ / CH@sub 4@ plasma at 700 °C before the growth of the film. After the in situ cleaning and the carburization, SiC thin films were grown on the carburized surface with the various ranges of microwave input power, SiH@sub 4@ to CH@sub 4@ flow ratio, and substrate temperature. Reflection high energy electron diffraction (RHEED) patterns of the films which were deposited at the substrate temperature 600 °C showed the changes from textured to ring pattern as the microwave power increased or the flow ratio decreased. Analyses of the films using XPS and spectroscopic ellipsometry showed that the ring and textured patterns were polycrystalline ß-SiC and Si-rich films, respectively. These results implies that stoichiometry of the film is affected by the microwave power and the flow ratio which presumably cause modification of the chemistry in plasmas. On the other hand, the crystallinity was affected by the substrate temperature. As the temperature increased up to 750 °C, the crystallinity was improved.