| 5:40pm |
TF-MoE1
Synthesis and Characterization of Novel Nitride Semiconductor Thin Films
S.R. Bauers, A. Holder, S. Lany, Andriy Zakutayev, National Renewable Energy Laboratory |
| 6:00pm |
TF-MoE2
Rheology Behavior and Flash Light Sintering Characteristics of Cu/Ag hybrid-ink for Multi-layered Flexible Printed Circuit Board (FPCB) Application in Printed Electronics
Ji-Hyeon Chu, S.J. Joo, H.-S. Kim, Hanyang University, Seoul, Korea |
| 6:20pm |
TF-MoE3
Synthesis and Characterization of Pt-Ag Alloyed Thin Films Deposited using Inverted Cylindrical Magnetron Sputtering with a Configurable Target Assembly
Saxon Tint, Johnson Matthey Inc., G.V. Taylor, Rowan University, E.M. Burkholder, Johnson Matthey Inc., J.D. Hettinger, Rowan University, S. Amini, Johnson Matthey Inc. |
| 6:40pm |
TF-MoE4 Invited Paper
Surface and Interface Imaging by Ultrahigh Resolution Laser-based Photoemission Electron Microscopy
Toshiyuki Taniuchi, The University of Tokyo, Japan, S. Shin, The University of Tokyo, AIST-UTokyo OPERANDO-OIL, Japan |
| 7:40pm |
TF-MoE7
All Photonic Annealing of Solution based Indium-Gallium-Zinc-Oxide Thin Film Transistor with Printed Ag Electrode via Flash White Light combined with Deep-UV Light
Chang-Jin Moon, H.-S. Kim, Hanyang University, Seoul, Korea |
| 8:00pm |
TF-MoE8
Carbon-nanotube Dispersed Ga2O3Films for UV Transparent Electrodes Fabricated by Molecular Precursor Method
Tohru Honda, Y. Takahashi, R. Yoshida, C. Mochizuki, H. Nagai, T. Onuma, T. Yamaguchi, M. Sato, Kogakuin University, Japan |