AVS 64th International Symposium & Exhibition
    Thin Films Division Wednesday Sessions

Session TF+EM+MI-WeM
Thin Films for Microelectronics

Wednesday, November 1, 2017, 8:00 am, Room 21
Moderators: Erwin Kessels, Eindhoven University of Technology, The Netherlands, Adrie Mackus, Eindhoven University of Technology, The Netherlands


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Click a paper to see the details. Presenters are shown in bold type.

8:00am TF+EM+MI-WeM1
Electrode Modulated Electric Field Capacitance Nonlinearity in ALD Al2O3 and HfO2 Metal-Insulator-Metal Capacitors
D.Z. Austin, K. Holden, John Conley, Jr., Oregon State University
8:20am TF+EM+MI-WeM2
Difference of the Hysteresis in Capacitance-voltage Characteristics of ALD-Al2O3 MIS Capacitors on Si and GaN Substrate
Masaya Saito, T. Suwa, A. Teramoto, Tohoku University, Japan, T. Narita, Toyota Central R&D Labs. Inc., Japan, T. Kachi, Nagoya University, Japan, R. Kuroda, S. Sugawa, Tohoku University, Japan
8:40am TF+EM+MI-WeM3
Monolithic Integration of C-type Erbium Oxide on GaN(0001) by Atomic Layer Deposition
Pei-Yu Chen, A. Posadas, The University of Texas at Austin, S. Kwon, Q. Wang, M. Kim, The University of Texas at Dallas, A. Demkov, J.G. Ekerdt, The University of Texas at Austin
9:00am TF+EM+MI-WeM4
High-Performance p-Type Thin Film Transistors Using Atomic-Layer-Deposited SnO Films
S.H. Kim, I.-H. Baek, J.J. Pyeon, Korea Institute of Science and Technology, Republic of Korea, T.-M. Chung, J.H. Han, Korea Research Institute of Chemical Technology, Republic of Korea, SeongKeun Kim, Korea Institute of Science and Technology, Republic of Korea
9:20am TF+EM+MI-WeM5 Invited Paper
Recent Progresses of Atomic Layer Deposited Oxide Semiconductors for Emerging Display Applications
Jin-Seong Park, J. Sheng, J.H. Lee, Hanyang University, Republic of Korea
11:00am TF+EM+MI-WeM10
Silicon Nitride Thin Films Grown by Hollow Cathode Plasma-Enhanced ALD using a Novel Chlorosilane Precursor
Xin Meng, H.S. Kim, A.T. Lucero, J.S. Lee, Y.-C. Byun, J. Kim, University of Texas at Dallas, B.K. Hwang, X. Zhou, M. Telgenhoff, J. Young, Dow Chemical
11:20am TF+EM+MI-WeM11
Removal of Charge Centers in Hafnia Films by Remote Plasma Nitruration
Orlando Cortazar-Martínez, J.A. Torres-Ochoa, C.L. Gomez-Muñoz, A. De Luna-Bugallo, A. Herrera-Gomez, CINVESTAV-Unidad Queretaro, Mexico
11:40am TF+EM+MI-WeM12
Seam-free Bottom-up Filling of Trenches with HfO2 using Low Temperature CVD
Tushar Talukdar, W.B. Wang, E. Mohimi, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana-Champaign
12:00pm TF+EM+MI-WeM13
Low-κ Organosilicon Thin Films Deposited by iCVD for Electrical Insulation of Through Silicon Vias
Mélanie Lagrange, C. Ratin, M. Van-Straaten, C. Ribière, T. Mourier, V. Jousseaume, CEA-Leti, France