AVS 64th International Symposium & Exhibition
    Plasma Science and Technology Division Wednesday Sessions
       Session PS+SS+TF-WeA

Paper PS+SS+TF-WeA3
Controlling the Thin Film Properties of Silica Synthesised by Atmospheric Pressure-Plasma Enhanced CVD

Wednesday, November 1, 2017, 3:00 pm, Room 22

Session: Plasma Deposition
Presenter: Fiona Elam, FOM institute DIFFER, Netherlands
Authors: F.M. Elam, FOM institute DIFFER, Netherlands
A.S. Meshkova, FOM institute DIFFER, Netherlands
B.C.A.M. van der Velden-Schuermans, FUJIFILM Manufacturing Europe B.V.
S.A. Starostin, FUJIFILM Manufacturing Europe B.V.
M.C.M. van de Sanden, FOM Institute DIFFER, Netherlands
H.W. de Vries, FOM institute DIFFER, Netherlands
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Atmospheric pressure-plasma enhanced chemical vapour deposition (AP-PECVD) is an innovative technology that can be integrated into many existing manufacturing systems to facilitate the mass production of functional films; specifically encapsulation foils. These barrier films are essential to the flexible electronics industry, envisioned to protect devices such as flexible solar cells and organic light emitting diodes against degradation from oxygen and water.

Industrially and commercially relevant roll-to-roll AP-PECVD has been used to deposit silica thin films onto flexible polyethylene 2,6 naphthalate substrates by means of a glow-like dielectric barrier discharge using an air-like gas mixture. Single and bilayer films were evaluated in terms of their encapsulation performance, their chemical structure, the nature of their porosity and their morphology, with respect to the deposition conditions.

It was found that by increasing the plasma residence time and reducing the precursor (tetraethyl orthosilicate (TEOS)) flux, the specific input energy per TEOS molecule could be enhanced, which in turn resulted in the deposition of films with a lower intrinsic porosity. However, an input E/TEOS greater than 9 keV was found to limit the encapsulating performance of single layer barrier films, due to the creation of ~1 μm diameter pinhole defects. This restriction was overcome by the deposition of a semi-porous silica ‘buffer’ layer between the polymer substrate and silica ‘barrier’ layer. The buffer layer within the bilayer architecture acted as a protective coating to prevent excessive plasma-surface interactions that can occur during the harsh processing conditions necessary to generate dense barrier films. As a result, the bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 2×10-4 g m-2 day-1, values so far unprecedented for silica encapsulation barriers deposited at atmospheric pressure on flexible polymer substrates. Finally, regarding process throughput for the manufacture of silica thin films capable of protecting flexible solar cells, a 140% increase in processing speed was achieved for bilayer films with respect to 100 nm single layer barriers of equivalent encapsulation performance.