| AVS 64th International Symposium & Exhibition | |
| Advanced Ion Microscopy Focus Topic | Wednesday Sessions |
| Session HI-WeA |
| Session: | Emerging Ion Sources and Optics |
| Presenter: | Richard Livengood, Intel Corporation, USA |
| Authors: | R.H. Livengood, Intel Corporation, USA R. Hallstein, Intel Corporation, USA S. Tan, Intel Corporation, USA Y. Greenzweig, Intel Corporation, Israel Y. Drezner, Intel Corporation, Israel A. Raveh, Intel Corporation, Israel A.V. Steele, zeroK NanoTech, USA B. Knuffman, zeroK NanoTech, USA A. Schwarzkopf, zeroK NanoTech, USA |
| Correspondent: | Click to Email |
Focused ion beam Nanomachining is used extensively in semiconductor materials and circuit analysis applications. Applications range from using ion beams for large area machining for de-process sample for metrology and defect analysis, to high precision nanomachining to access device circuits [1,2]. There have been many different focused ion beam technologies developed and refined over the last 30 years to perform this type of machining. The two primary focused beam-source technologies used today are: Gallium Liquid Metal Ion source (LMIS) for micro and nanomachining applications [3,4]; and 2) Xenon plasma-cusp ion sources used for bulk material micro-machining in packages interconnects, TSV's, and backend metal layers [5,6]. More recently, the neon and nitrogen (N2) gas field ion sources (GFIS) have also been introduced to enable very small, high precession Nanomachining for circuit rewiring and mask defect repairs respectively [7,8]. Another emerging ion beam / source technology are cold beams (base on ionization of atoms cooled to sub kelvin temperatures, which gives them very low energy spread) [9]. Two such emerging sources are cesium based cold beam sources under development by ZeroK Nanotech Inc. and TOH (Tescan Orsay-Physics Holdings) [10,11].
As part of Intel's due diligence to identify break through ion beam technologies to keep pace with semiconductor scaling requirements and help identify novel analytical applications, Intel has recently been analyzing the attributes of cesium for semiconductor applications [12]. In this paper, we will discuss the attribute requirements for various semiconductor applications and publish early cesium beam machining performance attributes - based on joint characterization experiments performed by Intel and ZeroK Nanotech on cesium LoTIS focused ion beam using ZeroK's proof of concept test platform. Analysis will include preliminary characterization results for material sputter rates, beam induced etching, and other Nanomachining attributes.