| AVS 62nd International Symposium & Exhibition | |
| Selective Deposition as an Enabler of Self-Alignment Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | SD+AS+EM+PS-ThA1 Invited Paper Surface Chemistry Related to Selective Deposition Suvi Haukka, ASM Microchemistry Ltd., Finland, J.W. Maes, ASM Belgium |
| 3:00pm | SD+AS+EM+PS-ThA3 Invited Paper Selective Deposition - The New Patterning Paradigm? Florian Gstrein, Intel Corporation |
| 4:00pm | SD+AS+EM+PS-ThA6 Area-Selective Molecular Layer Deposition: Enhanced Selectivity via Selective Etching Richard Closser, D.S. Bergsman, F.H. Minaye Hashemi, S.F. Bent, Stanford University |
| 4:20pm | SD+AS+EM+PS-ThA7 Nucleation and Steady State ALD of Metallic Tin Using SnCl4 and a Silyl Pyrazine Reducing Agent Eric Stevens, M.B. Mousa, G.N. Parsons, North Carolina State University |
| 4:40pm | SD+AS+EM+PS-ThA8 Determination of the Minimum Saturating Dose during Atomic Layer Deposition of Alumina and Titania on Si(100) and Si(100)-H D. Dick, University of Texas at Dallas, Joshua Ballard, J. Randall, Zyvex Labs, Y.J. Chabal, University of Texas at Dallas |
| 5:00pm | SD+AS+EM+PS-ThA9 Selective Growth of GeSbTe Phase-Changing Materials Utilizing Self-Aligned Confined Structure ByungJoon Choi, Seoul National University of Science and Technology, Republic of Korea, T. Eom, C.S. Hwang, Seoul National University, Republic of Korea |
| 5:20pm | SD+AS+EM+PS-ThA10 Toward an All- Vapor Process for Area Selective Atomic Layer Deposition FatemehSadat Hashemi, S.F. Bent, Stanford University |
| 5:40pm | SD+AS+EM+PS-ThA11 Selective Deposition of ALD Metal oxides and Metal Thin Films by Fab-Friendly Surface Treatments Kandabara Tapily, K.-H. Yu, S. Consiglio, R. Clark, D. O'Meara, C. Wajda, G. Leusink, TEL Technology Center, America, LLC |