| AVS 62nd International Symposium & Exhibition | |
| Selective Deposition as an Enabler of Self-Alignment Focus Topic | Thursday Sessions |
| Session SD+AS+EM+PS-ThA |
| Session: | Process Development for Selective Deposition and Self-aligned Patterning |
| Presenter: | Kandabara Tapily, TEL Technology Center, America, LLC |
| Authors: | K. Tapily, TEL Technology Center, America, LLC K.-H. Yu, TEL Technology Center, America, LLC S. Consiglio, TEL Technology Center, America, LLC R. Clark, TEL Technology Center, America, LLC D. O'Meara, TEL Technology Center, America, LLC C. Wajda, TEL Technology Center, America, LLC G. Leusink, TEL Technology Center, America, LLC |
| Correspondent: | Click to Email |
For the last 5 decades, the semiconductor industry has relied on the continued scaling down of the device feature size in order to improve performance and increase bit density according to Moore’s law. However, with the delay in implementation of extreme ultraviolet lithography (EUV) in high volume manufacturing,1 patterning beyond the 14 nm technology node is getting extremely difficult to manage due to the overlay control and the increase in manufacturing cost due to multi-layer alignments. In order to keep reducing the device feature size, new patterning solutions are needed such as selective deposition and selective etching of materials. Atomic layer deposition (ALD) has emerged as one of the leading film deposition techniques as a result of the semiconductor device scaling.2 ALD provides excellent film control, uniformity and high conformality. ALD is highly surface reaction driven and it is possible to modify the substrate surface to activate or deactivate growth on selected area hence selective-area ALD (SA-ALD). Selective-area ALD can simplify and reduce the high manufacturing cost associated with highly aggressive patterning schemes by eliminating certain lithography steps. Thin films can now be selectively deposited or removed from a desired area. Most selective-area ALD studies in the literature are conducted with the use of self-assembled monolayers (SAMs) in order to deactivate or activate growth on certain areas.3-5 SAMs are thin organic films that form spontaneously in tightly packed oriented molecules on solid surfaces. A key enabler of SAMs is the ability to turn these organic layers into patterned layers. However, thermal stability and the slow formation process into well packed layer are some of the major drawbacks of SAMs.5
In this study, a non SAMs based approach was used to inhibit ALD growth of metals and metal oxides. Using different surface treatments, it was observed the growth of the ALD thin films can be modulated, see Fig.1 and Fig.2 respectively. ALD Al2O3 growth was suppressed by a combination of the vapor HF and cyclical low temperature plasma hydrogen treatment and deposition. Additionally, ALD TaN growth was also inhibited by the use of a combination trimethylsilane (TMS) and dimethylamine (DMA) treatment of the surface prior to ALD deposition.
Reference
1. J. Beynet, et al, Proc. SPIE, 7520, 75201J (2009).
2. S. M. George, Chem. Rev.110, 111 (2010).
3. ChaMarra K et al. Nanotechnol,3, 114 (2012).
4. J. C. Love et al., Chem. Rev.,105, 1103 (2005).
5. A. J. M. Mackus et al, Nanoscale, 6, 10941 (2014).