AVS 62nd International Symposium & Exhibition, Session EM+MS-ThM

AVS 62nd International Symposium & Exhibition
Electronic Materials and Processing	Thursday Sessions

Session EM+MS-ThM
III-N Nitrides for Optoelectronic Applications

Thursday, October 22, 2015, 8:00 am, Room 210E
Moderators: Rachael Myers-Ward, U.S. Naval Research Laboratory, Aubrey Hanbicki, U.S. Naval Research Laboratory

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Click a paper to see the details. Presenters are shown in bold type.

8:00am	EM+MS-ThM1 Hollow Cathode Plasma-Assisted Atomic Layer Deposition of Wurtzite InN and In_xGa_1-xN Thin Films with Low Impurity Content Ali Haider, S. Kizir, C. Ozgit-Akgun, E. Goldenberg, M. Alevli, A. Kemal Okyay, N. Biyikli, Bilkent University, Turkey
8:20am	EM+MS-ThM2 Infrared Nanoscopy of Indium-rich InGaN Epilayers Yohannes Abate, D. Seidlitz, N. Dietz, Georgia State University, I. Ferguson, Missouri University of Science and Technology
8:40am	EM+MS-ThM3 Surface Treatment and Characterization of InN (0001) S.P. Park, T. Kaufman-Osborn, K. Sardashti, University of California San Diego, S.M. Islam, D. Jena, University of Notre Dame, Hyunwoong Kim, A.C. Kummel, University of California San Diego
9:00am	EM+MS-ThM4 State-Of-The-Art High Efficiency Thermoelectric Material: III-Nitrides as a Wide Bandgap Semiconductor B. Kucukgok, N. Lu, University of North Carolina at Charlotte, Nikolaus Dietz, Georgia State University, I. Ferguson, Missouri University of Science and Technology
9:20am	EM+MS-ThM5 Invited Paper Nanofabrication of Advanced Nanophotonic Structures by Nanoimprinting Stefano Cabrini, Lawrence Berkeley National Laboratory (LBNL)
11:00am	EM+MS-ThM10 Invited Paper Advanced III-Nitride Device for RF Switch Applications: A Record 2THz Fco Super-Lattice Castellated Field Effect Transistor (SLCFET) for Low Loss RF Switching Shalini Gupta, R. Howell, E. Stewart, J. Parke, B. Nechay, M. King, H. Cramer, J. Hartman, R. Freitag, M. Snook, I. Wathuthanthri, G. Henry, K. Renaldo, Northrop Grumman ES
11:40am	EM+MS-ThM12 Developing Periodically Oriented Gallium Nitride for Frequency Conversion Jennifer Hite, R. Goswami, J.A. Freitas, M.A. Mastro, I. Vurgaftman, J.R. Meyer, U.S. Naval Research Laboratory, C.G. Brown, University Research Foundation, F.J. Kub, S.R. Bowman, C.R. Eddy, Jr., U.S. Naval Research Laboratory
12:00pm	EM+MS-ThM13 Electronic and Optical Device Applications based on III-Nitride Films Grown by Plasma-Assisted ALD B. Tekcan, Sami Bolat, C. Ozgit-Akgun, N. Biyikli, A.K. Okyay, Bilkent University, Turkey