| AVS 61st International Symposium & Exhibition | |
| Surface Science | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SS+EM-FrM1 Two Dimensional Supramolecular Ordering of Oligothiophene Molecules on the Si(111) √3×√3-Ag Surface R. Liu, Lakehead University, Canada, C. Fu, D.F. Perepichka, McGill University, Canada, Mark Gallagher, Lakehead University, Canada |
| 8:40am | SS+EM-FrM2 Interface Formation between a Self-Assembled Monolayer and an Organic Semiconductor Sujitra Pookpanratana, H.-J. Jang, A.N. Brigeman, J.I. Basham, O.A. Kirillov, D.J. Gundlach, National Institute of Standards and Technology (NIST), O.D. Jurchescu, Wake Forest University, C.A. Richter, C.A. Hacker, NIST |
| 9:00am | SS+EM-FrM3 Reactions of Benzoquinone with Hydrogen Terminated Silicon Surfaces R.L. Opila, Meixi Chen, N.A. Kotulak, N.J. Schreiber, University of Delaware |
| 9:20am | SS+EM-FrM4 High-Quality Monolayers Derived from Short Alkyne Chains on Si(111) Surfaces Sidharam Pujari, A. Filippov, S. Gangarapu, H. Zuilhof, Wageningen University, Netherlands |
| 9:40am | SS+EM-FrM5 Surface Modification of Antimonide-Based Compound Semiconductor Superlattices using ALD Erin Cleveland, J. Nolde, C. Canedy, E. Aifer, Naval Research Laboratory |
| 10:00am | SS+EM-FrM6 Mechanism Changes Caused by Metal Catalyst During Silicon Etching in V2O5 + HF Solutions Kurt Kolasinski, W.B. Barclay, West Chester University |
| 10:40am | SS+EM-FrM8 Selective Wet Etching of III-V Semiconductors with HCl, H2O2, and α-Hydroxy Acid Mixtures Pablo Mancheno-Posso, R. Jain, A.J. Muscat, University of Arizona |
| 11:00am | SS+EM-FrM9 Lanthanum Quantification for Optimization of Advanced High-k/Metal Gate Stacks using Low Energy Electron X-ray Emission Spectrometry E. Martinez, CEA, LETI, MINATEC Campus, France, C. Trouiller, STMicroelectronics, France, M.P. Moret, N. Morel, CAMECA, France, Andrew Davis, CAMECA Instruments Inc, P. Caubet, STMicroelectronics, France, F. Bertin, CEA, LETI, MINATEC Campus, France |