AVS 61st International Symposium & Exhibition
    Surface Science Friday Sessions
       Session SS+EM-FrM

Paper SS+EM-FrM9
Lanthanum Quantification for Optimization of Advanced High-k/Metal Gate Stacks using Low Energy Electron X-ray Emission Spectrometry

Friday, November 14, 2014, 11:00 am, Room 309

Session: Semiconductor Surfaces and Interfaces 2
Presenter: Andrew Davis, CAMECA Instruments Inc
Authors: E. Martinez, CEA, LETI, MINATEC Campus, France
C. Trouiller, STMicroelectronics, France
M.P. Moret, CAMECA, France
N. Morel, CAMECA, France
A. Davis, CAMECA Instruments Inc
P. Caubet, STMicroelectronics, France
F. Bertin, CEA, LETI, MINATEC Campus, France
Correspondent: Click to Email

We report about accurate monitoring of ultra-low La doses inserted in advanced high-k/metal gate stacks for threshold voltage tuning purposes. Three characterization techniques are implemented for precise and reproducible lanthanum quantification. LEXES (Low energy Electron X-ray Emission Spectrometry) capabilities are highlighted in terms of sensitivity and accuracy thanks to a comparison with reference results obtained by Rutherford Backscattering Spectrometry (RBS). The capabilities of state-of-the-art Auger nanoprobes for depth profiling in the sub-nanometer range are also illustrated.