| AVS 61st International Symposium & Exhibition | |
| Selective Deposition as an Enabler of Self-Alignment Focus Topic | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | SD-WeA1 Invited Paper Material Requirements for Self-Aligned Patterning – a Lithographer’s Perspective Charles Wallace, Intel Corporation |
| 3:00pm | SD-WeA3 Invited Paper Controlling Selective Area Atomic Layer Deposition of Metals and Metal Oxides without the use of Organic Blocking Layers Gregory Parsons, B. Kalanyan, S.E. Atanasov, North Carolina State University |
| 4:20pm | SD-WeA7 Selective Deposition through Organic Blocking Layers Rami Hourani, S.B. Clendenning, G.M. Kloster, A. Basu, F. Gstrein, Intel Corporation |
| 4:40pm | SD-WeA8 Selective Deposition and Selective Etching of Patterned Dielectric Films FatemehSadat Minaye Hashemi, C. Prasittichai, S.F. Bent, Stanford University |
| 5:00pm | SD-WeA9 All-Dry Etching Strategy for Self-Assembly Block Copolymers PS-b-PMMA Philippe Bézard, G. Cunge, E. Latu-Romain, A. Tavernier, LTM, France, R. Tiron, CEA-LETI, France, X. Chevalier, Arkema, France, O. Joubert, LTM - CEA/LETI, France |
| 5:20pm | SD-WeA10 Selective CVD Cobalt Capping Advanced- Groundrule Cu Interconnects : Electromigration Study Andrew Simon, IBM Microelectronics Division, T. Bolom, GLOBALFOUNDRIES Inc., C. Niu, ST Microelectronics, F.H. Baumann, IBM Microelectronics Division, C.-K. Hu, IBM Research Division, C. Parks, J. Nag, IBM Microelectronics Division, J.-Y. Lee, GLOBALFOUNDRIES Inc., C.-C. Yang, S. Nguyen, IBM Research Division, D. Priyadarshini, D. Kioussis, IBM Microelectronics Division, T. Nogami, IBM Research Division, S. Guggilla, J. Ren, J. AuBuchon, Applied Materials, Inc. |
| 5:40pm | SD-WeA11 Growth and Characterization of Ultra-Thin Silicon Dioxide Layers for Low-k Dielectrics on HOPG and Graphene Antonio Lucero, L. Cheng, Y.G. Lee, HH. Hwang, X. Qin, R.M. Wallace, J.Y. Kim, University of Texas at Dallas |