| AVS 61st International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS-TuA1 Invited Paper Highly-Selective Etch Gas Chemistry Design for Precise DSAL Dry Development Process Hisataka Hayashi, T. Imamura, H. Yamamoto, I. Sakai, M. Omura, Toshiba Corporation Center for Semiconductor Research & Development, Japan |
| 3:00pm | PS-TuA3 Plasma Etch Considerations for Roughness Improvements during EUV and DSA Pattern Transfer using Mid Gap CCP Vinayak Rastogi, H. Matsumoto, A. Metz, A. Ranjan, N. Mohanty, A. Ko, Y. Chiba, TEL Technology Center, America, LLC, X. Hu, L. Wang, E. Hosler, R. Farrell, M. Preil, GLOBALFOUNDRIES U.S. Inc. |
| 4:20pm | PS-TuA7 Interactions between the Plasma and the Mask Material during Contact Etching Mokrane Mebarki, STMicroelectronics, France, M. Darnon, LTM - MINATEC - CEA/LETI, France, C.J. Jenny, D. Ristoiu, STMicroelectronics, France, N. Posseme, Cea-Leti, Minatec, O. Joubert, LTM - MINATEC - CEA/LETI, France |
| 4:40pm | PS-TuA8 Contact Level Patterning Challenges for Sub 22-nm Architecture Jeffrey Shearer, J. Dechene, S. Kanakasabapathy, IBM Corporation, N. Mohanty, B. Messer, H. Cottle, A. Metz, TEL Technology Center, America, LLC, J. Lee, Samsung Electronics |
| 5:00pm | PS-TuA9 Method for Preferential Shrink Ratio Control in Elliptical Contact Etch Hongyun Cottle, A. Lisi, A. Metz, K. Kumar, D. Koty, A. Mosden, P. Biolsi, TEL Technology Center, America, LLC |
| 5:20pm | PS-TuA10 Novel Fluorocarbons Chemistries to Enable 3D NAND High Aspect Ratio Etching R. Gupta, B. Lefevre, Venkateswara Pallem, N. Stafford, American Air Liquide, J.M. Kim, K. Doan, S. Nemani, Applied Materials Inc. |
| 5:40pm | PS-TuA11 LER/LWR Improvements in Dual Frequency CCPs for Advanced Node Patterning Mingmei Wang, N. Mohanty, S. Nakamura, A. Ko, A. Ranjan, TEL Technology Center, America, LLC |