AVS 61st International Symposium & Exhibition
    Materials Characterization in the Semiconductor Industry Focus Topic Monday Sessions

Session MC+AP+AS-MoM
Characterization of 3D Structures, 2D films and Interconnects

Monday, November 10, 2014, 8:20 am, Room 313
Moderators: Paul Ronsheim, CTO, PAR Technical Consulting, previously with IBM, Paul van der Heide, GLOBALFOUNDRIES, NY, USA


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Click a paper to see the details. Presenters are shown in bold type.

8:20am MC+AP+AS-MoM1 Invited Paper
Dopant/Carrier and Compositional Profiling for 3D-Structures and Confined Volumes.
Wilfried Vandervorst, A. Kumar, J. Demeulemeester, A. Franquet, P. Eyben, J. Bogdanowicz, M. Mannarino, A. Kambham, U. Celano, IMEC, KU Leuven Belgium
9:00am MC+AP+AS-MoM3
Characterization of the Periodicity (Pitch) and Stress of Transistor Fin Structures using X-Ray Diffraction Reciprocal Space Mapping
Alain Diebold, M. Medikonda, SUNY College of Nanoscale Science and Engineering, M. Wormington, Jordan Valley Semiconductors Inc
9:20am MC+AP+AS-MoM4
MBE Grading Techniques for the Growth of InAsSb Films with Inherent Properties Unaffected by Strain
Wendy Sarney, S.P. Svensson, US Army Research Laboratory, Y. Lin, D. Wang, L. Shterengas, D. Donetsky, G. Belenky, Stony Brook University
9:40am MC+AP+AS-MoM5
Quantitative 3-D Imaging of Filaments in Hybrid Resistive Memory Devices by Combined XPS and ToF-SIMS Spectroscopies
Y. Busby, Jean-Jacques Pireaux, University of Namur, Belgium
10:00am MC+AP+AS-MoM6
High Throughput Electron Diffraction-Based Metrology of Nanocrystalline Materials
X. Liu, Carnegie Mellon University, D. Choi, Korea Railroad Research Institute, Republic of Korea, N.T. Nuhfer, Carnegie Mellon University, D.L. Yates, T. Sun, University of Central Florida, G.S. Rohrer, Carnegie Mellon University, K.R. Coffey, University of Central Florida, Katayun Barmak, Columbia University
10:40am MC+AP+AS-MoM8 Invited Paper
LEIS Characterization of the Outer Surface, Ultra-Thin Layers and Contacts
Hidde Brongersma, ION-TOF / Tascon / Calipso, Netherlands, P. Bruener, T. Grehl, ION-TOF GmbH, Germany, H.R.J. ter Veen, Tascon GmbH, Germany
11:20am MC+AP+AS-MoM10
Backside versus Frontside Characterization of High-k/Metal Gate Stacks for CMOS sub-14 nm Technological Nodes
Eugenie Martinez, CEA, LETI, MINATEC Campus, France, B. Saidi, P. Caubet, F. Piallat, STMicroelectronics, France, H. Kim, CEA, LETI, MINATEC Campus, France, S. Schamm-Chardon, CEMES-CNRS, France, R. Gassilloud, CEA, LETI, MINATEC Campus, France
11:40am MC+AP+AS-MoM11
Charge Storage Properties of Al/(1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BTBCN)/HfO2/p-Si Metal/Ferroelectric/Insulator/Semiconductor Devices
Souvik Kundu, M. Clavel, D. Maurya, M. Hudait, S. Priya, Virginia Tech