| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-ThM1 Invited Paper Advanced FinFET Process for 22nm and Beyond M. Masahara, T. Matsukawa, Y. Liu, K. Endo, S. O'uchi, National Institute of AIST, Japan |
| 9:00am | EM-ThM4 Wideband Characterization for Optimized Performance in Low Voltage Low Power Applications M. Emam, Incize, Belgium, J.-P. Raskin, Université Catholique de Louvain, Belgium |
| 9:20am | EM-ThM5 Ultra Low-Power (ULP) Current Logic Gates for Subthreshold-Triode Operation K. Lam, Chinese University of Hong Kong, Hong Kong Special Administrative Region of China, T. Mak, Newcastle University, UK |
| 9:40am | EM-ThM6 Impact of Threading Dislocation Density and Dielectric Layer on I-V Characteristics of Schottky Diodes Fabricated from Ti and Epitaxially Grown p-Type Ge on Si S. Ghosh, S.M. Han, University of New Mexico |
| 10:40am | EM-ThM9 Invited Paper Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide J. Speck, University of California, Santa Barbara |
| 11:20am | EM-ThM11 Electronically Unmixed State of a Statistical Two-Dimensional Ga-Si Semiconductor Alloy on Si(111) P. Ebert, S. Landrock, Forschungszentrum Jülich, Germany, Y. Jiang, Peking University, China, K.H. Wu, Chinese Academy of Sciences, China, E.G. Wang, Peking University, China, R.E. Dunin-Borkowski, Forschungszentrum Jülich, Germany |
| 11:40am | EM-ThM12 Atomistic Analysis of Ge on a-SiO2 using an Emipirical Interatomic Potential to Describe Selective Epitaxial Growth Y. Chuang, University of Pennsylvania, Q. Li, D. Leonhardt, S.M. Han, University of New Mexico, T. Sinno, University of Pennsylvania |