AVS 58th Annual International Symposium and Exhibition
    Transparent Conductors and Printable Electronics Focus Topic Thursday Sessions

Session TC+EM+NS-ThA
Transparent / Printable Electronics Part 2

Thursday, November 3, 2011, 2:00 pm, Room 106
Moderator: Steve Durbin, University at Buffalo


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm TC+EM+NS-ThA1 Invited Paper
ZnO-based Schottky Diodes and Their Utilization in Transparent Electronics
Holger von Wenckstern, Universität Leipzig, Germany
2:40pm TC+EM+NS-ThA3
Photoresponse of Amorphous In-Ga-Zn-O / Pt Schottky Junction
DongHee Lee, K. Nomura, T. Kamiya, H. Hosono, Tokyo Institute of Technology, Japan
3:00pm TC+EM+NS-ThA4
Novel Metal-organic Precursors for Printed Electronics - Synthesis, Implementation, and Properties
John Belot, R.A. Potash, R.D. McCullough, K.A. Singh, L. Porter, Carnegie Mellon University
3:40pm TC+EM+NS-ThA6
A New Application for a-IGZO TFTs: An Addressable Microfluidic Electrowetting Channel Device
Jiyong Noh, J.H. Noh, University of Tennessee, E. Kreit, J. Heikenfeld, University of Cincinnati, P.D. Rack, University of Tennessee
4:00pm TC+EM+NS-ThA7 Invited Paper
Amorphous Oxide Semiconductor Thin-Film Transistors
John Wager, K. Hoshino, Oregon State University, B. Yeh, R.L. Hoffman, Hewlett-Packard Company
4:40pm TC+EM+NS-ThA9
Why Optimum Oxygen Pressure Range Exists for Fabricating Amorphous In-Ga-Zn-O Thin-Film Transistor and How it Should be Optimized
Keisuke Ide, K. Nomura, T. Kamiya, H. Hosono, Tokyo Institute of Technology, Japan
5:00pm TC+EM+NS-ThA10
Effects of Low-Temperature Annealing and Deep Traps in Operation Characteristics of Amorphous In-Ga-Zn-O Thin-Film Transistors
Toshio Kamiya, Y. Kikuchi, K. Ide, K. Nomura, H. Hosono, Tokyo Institute of Technology, Japan
5:20pm TC+EM+NS-ThA11
β-alumina (SBA): A Promising High Dielectric Constant Gate Material for Solution Processed, Transparent and Low Voltage Transistor Devices
Bo Zhang, Y. Liu, H. Katz, Johns Hopkins University