| AVS 58th Annual International Symposium and Exhibition | |
| Transparent Conductors and Printable Electronics Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | TC+EM+NS-ThA1 Invited Paper ZnO-based Schottky Diodes and Their Utilization in Transparent Electronics Holger von Wenckstern, Universität Leipzig, Germany |
| 2:40pm | TC+EM+NS-ThA3 Photoresponse of Amorphous In-Ga-Zn-O / Pt Schottky Junction DongHee Lee, K. Nomura, T. Kamiya, H. Hosono, Tokyo Institute of Technology, Japan |
| 3:00pm | TC+EM+NS-ThA4 Novel Metal-organic Precursors for Printed Electronics - Synthesis, Implementation, and Properties John Belot, R.A. Potash, R.D. McCullough, K.A. Singh, L. Porter, Carnegie Mellon University |
| 3:40pm | TC+EM+NS-ThA6 A New Application for a-IGZO TFTs: An Addressable Microfluidic Electrowetting Channel Device Jiyong Noh, J.H. Noh, University of Tennessee, E. Kreit, J. Heikenfeld, University of Cincinnati, P.D. Rack, University of Tennessee |
| 4:00pm | TC+EM+NS-ThA7 Invited Paper Amorphous Oxide Semiconductor Thin-Film Transistors John Wager, K. Hoshino, Oregon State University, B. Yeh, R.L. Hoffman, Hewlett-Packard Company |
| 4:40pm | TC+EM+NS-ThA9 Why Optimum Oxygen Pressure Range Exists for Fabricating Amorphous In-Ga-Zn-O Thin-Film Transistor and How it Should be Optimized Keisuke Ide, K. Nomura, T. Kamiya, H. Hosono, Tokyo Institute of Technology, Japan |
| 5:00pm | TC+EM+NS-ThA10 Effects of Low-Temperature Annealing and Deep Traps in Operation Characteristics of Amorphous In-Ga-Zn-O Thin-Film Transistors Toshio Kamiya, Y. Kikuchi, K. Ide, K. Nomura, H. Hosono, Tokyo Institute of Technology, Japan |
| 5:20pm | TC+EM+NS-ThA11 β-alumina (SBA): A Promising High Dielectric Constant Gate Material for Solution Processed, Transparent and Low Voltage Transistor Devices Bo Zhang, Y. Liu, H. Katz, Johns Hopkins University |