AVS 58th Annual International Symposium and Exhibition
    Transparent Conductors and Printable Electronics Focus Topic Thursday Sessions
       Session TC+EM+NS-ThA

Invited Paper TC+EM+NS-ThA7
Amorphous Oxide Semiconductor Thin-Film Transistors

Thursday, November 3, 2011, 4:00 pm, Room 106

Session: Transparent / Printable Electronics Part 2
Presenter: John Wager, Oregon State University
Authors: J.F. Wager, Oregon State University
K. Hoshino, Oregon State University
B. Yeh, Hewlett-Packard Company
R.L. Hoffman, Hewlett-Packard Company
Correspondent: Click to Email

Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are transitioning towards commercialization for active-matrix liquid crystal display flat-panel display backplane applications. They also appear to be well-positioned to meet the more demanding challenges associated with active-matrix organic light-emitting device backplanes. Additionally, AOS TFTs offer an attractive approach to printed electronics. The primary focus of this talk will be to discus our novel approach to top-side passivation of bottom-gate indium gallium zinc oxide (IGZO) and zinc tin oxide (ZTO) AOS TFTs. Device performance between passivated and unpassivated AOS TFTs will be compared. Passivation mechanisms will be considered in the context of induced-gap state and device physics electrostatic modeling.