Invited Paper TC+EM+NS-ThA1
ZnO-based Schottky Diodes and Their Utilization in Transparent Electronics

Thursday, November 3, 2011, 2:00 pm, Room 106

Transparent conducting oxides (TCO) have found application as electrode in emerging markets like that of thin films solar cells or flat panel displays. For this passive functionality the TCO material must combine high transparency preferentially over a wide spectral range and high conductivity. In the last years active transparent devices like photodetectors, transistors or a complete transparent circuitry are envisioned and rely on semiconducting properties of the material. Besides a precise control of the doping level in the active part of devices the creation of space charge regions by rectifying contacts is a prerequisite for active devices. In the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. In this contribution transparent, high-performance MESFETs, inverters etc. based on ZnO and related ternaries are presented. We discuss design prospects as well as limitations regarding device performance, reliability and stability.

The influence of the contact metal and dielectric passivation layers on the properties of ZnO Schottky diode, used as gate electrode within the MESFETs, as well as sources of non-idealities will be highlighted.