| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS+MN+TF-TuM1 Invited Paper Scallop Free TSV Etching Method for 3-D LSI Integration Yasuhiro Morikawa, T. Murayama, T. Sakuishi, S. Toyoda, K. Suu, ULVAC, Inc., Japan |
| 8:40am | PS+MN+TF-TuM3 Deep Silicon Etching of 0.8 µm to Hundreds of Microns Wide Trenches with the STiGer Process Thomas Tillocher, W. Kafrouni, GREMI, France, J. Ladroue, STMicroelectronics - GREMI, France, P. Lefaucheux, GREMI, France, M. Boufnichel, STMicroelectronics, France, P. Ranson, R. Dussart, GREMI, France |
| 9:00am | PS+MN+TF-TuM4 Evaluation of Alternative Passivation Chemistries for TSV Applications E.A. Joseph, IBM T.J. Watson Research Center, G. Matsuura, ZEON Chemicals L.P., S. Engelmann, IBM T.J. Watson Research Center, M. Nakamura, ZEON Chemicals L.P., Nicholas Fuller, E.M. Sikorski, M. Gordon, B.N. To, IBM T.J. Watson Research Center, H. Matsumoto, A. Itou, Zeon Corporation |
| 9:20am | PS+MN+TF-TuM5 Invited Paper Wafer Scale Hermetic Packaging of MEMS Christopher Gudeman, IMT |
| 10:40am | PS+MN+TF-TuM9 Invited Paper Challenges in Plasma Etch for NVM: Scaling and Materials Mark Kiehlbauch, Micron Technology, Inc. |
| 11:40am | PS+MN+TF-TuM12 Mechanisms of Selective Etching for Magnetic Materials: Ni, Co and Ta Etching by Carbon Monoxide/Methyl Alcohol Based Plasmas Kazuhiro Karahashi, T. Ito, S. Hamaguchi, Osaka University, Japan |