| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM2-MoA1 Invited Paper Oxides for Spintronics Kang Wang, P. Khalili, F. Xiu, University of California Los Angeles |
| 2:40pm | EM2-MoA3 Invited Paper Charge Trap Memories and 3D Approaches Gabriel Molas, CEA Leti Minatec Campus, France |
| 3:40pm | EM2-MoA6 Invited Paper A Survey of Cross Point Phase Change Memory Technologies Derchang Kau, Intel Corporation |
| 4:20pm | EM2-MoA8 ALD/PEALD CMOS Compatible Oxides for Resistive RAM Devices Amélie Salaün, V. Beugin, H. Grampeix, C. Licitra, N. Rochat, E. Martinez, P. Gergaud, CEA Leti, France, P. Gonon, LTM CNRS/CEA Leti, France, C. Vallée, LTM-CNRS/CEA Leti, France, C. Mannequin, CEA Leti, France, C. Gaumer, S. Jeannot, STMicroelectronics, France, J. Buckley, V. Jousseaume, J.P. Barnes, M. Veillerot, F. Pierre, I. Kieffer, CEA Leti, France |
| 4:40pm | EM2-MoA9 Resistive Switching in HfO2 Metal-Insulator-Metal Devices (RRAM) Marceline Bonvalot, Laboratoire des Technologies de la Microélectronique (LTM), France, C. Mannequin, P. Gonon, C. Vallee, LTM-CNRS, France, V. Jousseaume, H. Grampeix, Minatec, France |