AVS 58th Annual International Symposium and Exhibition
    Electronic Materials and Processing Division Monday Sessions

Session EM2-MoA
Dielectrics for Ultra Dense Memory Devices

Monday, October 31, 2011, 2:00 pm, Room 210
Moderator: Andrew Kummel, University of California San Diego


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM2-MoA1 Invited Paper
Oxides for Spintronics
Kang Wang, P. Khalili, F. Xiu, University of California Los Angeles
2:40pm EM2-MoA3 Invited Paper
Charge Trap Memories and 3D Approaches
Gabriel Molas, CEA Leti Minatec Campus, France
3:40pm EM2-MoA6 Invited Paper
A Survey of Cross Point Phase Change Memory Technologies
Derchang Kau, Intel Corporation
4:20pm EM2-MoA8
ALD/PEALD CMOS Compatible Oxides for Resistive RAM Devices
Amélie Salaün, V. Beugin, H. Grampeix, C. Licitra, N. Rochat, E. Martinez, P. Gergaud, CEA Leti, France, P. Gonon, LTM CNRS/CEA Leti, France, C. Vallée, LTM-CNRS/CEA Leti, France, C. Mannequin, CEA Leti, France, C. Gaumer, S. Jeannot, STMicroelectronics, France, J. Buckley, V. Jousseaume, J.P. Barnes, M. Veillerot, F. Pierre, I. Kieffer, CEA Leti, France
4:40pm EM2-MoA9
Resistive Switching in HfO2 Metal-Insulator-Metal Devices (RRAM)
Marceline Bonvalot, Laboratoire des Technologies de la Microélectronique (LTM), France, C. Mannequin, P. Gonon, C. Vallee, LTM-CNRS, France, V. Jousseaume, H. Grampeix, Minatec, France