| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Monday Sessions |
| Session EM2-MoA |
| Session: | Dielectrics for Ultra Dense Memory Devices |
| Presenter: | Derchang Kau, Intel Corporation |
| Correspondent: | Click to Email |
This survey reviews the current advances in phase change memory and the integrated selector. Based on memory cell configuration in array, there are 3 basic array types, including 2-termanl cross point array [1-6], 3-terminal NOR array [7, 8], NAND string [9]. Among all the configurations, stackable thin-film cross point memory delivers the densest array, therefore the most compact die size. Combining its attributes in cost, performance and reliability, cross point phase change technologies stimulate potential opportunities in computing memory hierarchy.
[1] DerChang Kau et.al., IEDM Technical Digest, p617, S27.1 (2009)
[2] Y. Sasago, et.al., Symposium on VLSI Tech., p24, T2B-1 (2009)
[3] K. Gopalakrishnan, et.al., Symposium on VLSI Tech., p205, T19-4 (2010)
[4] Yi-Chou Chen et.al., IEDM Technical Digest, S37.4 (2003)
[5] J.H. Oh, et.al., IEDM Technical Digest, S2.6 (2006)
[6] Giorgio Servalli, IEDM Technical Digest, p113, S5.7 (2009)
[7] Y.N. Hwang, et.al., Symposium on VLSI Circuits, p173 (2003)
[8] Fabio Pellizzer, et.al., Symposium on VLSI Technology, p122, (2006)
[9] Y. Sasago, et.al., Symposium on VLSI Tech., T5B-2 (2011)