| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-TuA1 Invited Paper High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap Marc Heyns, IMEC, Belgium |
| 2:40pm | EM-TuA3 Local Profile of the Dielectric Constant Near the Oxygen Vacancy in the GeO2 Films Jun Nakamura, M. Tamura, The University of Electro-Communications (UEC-Tokyo), Japan |
| 3:00pm | EM-TuA4 Two Step Passivation and ALD Monolayer Nucleation on Ge(100) Tobin Kaufman-Osborn, J.S. Lee, K. Kiantaj, W. Melitz, A.C. Kummel, University of California San Diego, A. Delabie, S. Sioncke, M. Caymax, G. Pourtois, IMEC, Belgium |
| 4:00pm | EM-TuA7 Invited Paper Bilayer High-k Gate Stacks on Ge and InGaAs Paul McIntyre, Stanford University |
| 4:40pm | EM-TuA9 Effect of Post Deposition Anneal on the Characteristics of InP MOS Capacitors with High-k Dielectrics Rohit Galatage, B. Brennan, H. Dong, D.M. Zhernokletov, C.L. Hinkle, R.M. Wallace, E.M. Vogel, The University of Texas at Dallas |
| 5:00pm | EM-TuA10 ALD Half Cycle Study of HfO2 on InP by In Situ XPS Hong Dong, D.M. Zhernokletov, B. Brennan, J. Kim, R.M. Wallace, University of Texas at Dallas |
| 5:20pm | EM-TuA11 Nonvolatile Memresistive Nano-Crossbar Switches in Pt/Ta2O5/Cu Solid Electrolytes Pragya Shrestha, K.P. Cheung, National Institute of Standards and Technology (NIST), H. Baumgart, Old Dominion University |
| 5:40pm | EM-TuA12 Metrology for Interfaces and Mass Transport in C-MOS Related Nanofilms A. Herrera-Gomez, Araceli Sanchez-Martinez, O. Ceballos-Sanchez, M.O. Vazquez-Lepe, CINVESTAV-Unidad Queretaro, Mexico, P. Lysaght, SEMATECH |