AVS 58th Annual International Symposium and Exhibition
    Electronic Materials and Processing Division Tuesday Sessions

Session EM-TuA
High-k Dielectrics for MOSFETs Part 2

Tuesday, November 1, 2011, 2:00 pm, Room 210
Moderator: Andrew Kummel, University of California San Diego


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM-TuA1 Invited Paper
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap
Marc Heyns, IMEC, Belgium
2:40pm EM-TuA3
Local Profile of the Dielectric Constant Near the Oxygen Vacancy in the GeO2 Films
Jun Nakamura, M. Tamura, The University of Electro-Communications (UEC-Tokyo), Japan
3:00pm EM-TuA4
Two Step Passivation and ALD Monolayer Nucleation on Ge(100)
Tobin Kaufman-Osborn, J.S. Lee, K. Kiantaj, W. Melitz, A.C. Kummel, University of California San Diego, A. Delabie, S. Sioncke, M. Caymax, G. Pourtois, IMEC, Belgium
4:00pm EM-TuA7 Invited Paper
Bilayer High-k Gate Stacks on Ge and InGaAs
Paul McIntyre, Stanford University
4:40pm EM-TuA9
Effect of Post Deposition Anneal on the Characteristics of InP MOS Capacitors with High-k Dielectrics
Rohit Galatage, B. Brennan, H. Dong, D.M. Zhernokletov, C.L. Hinkle, R.M. Wallace, E.M. Vogel, The University of Texas at Dallas
5:00pm EM-TuA10
ALD Half Cycle Study of HfO2 on InP by In Situ XPS
Hong Dong, D.M. Zhernokletov, B. Brennan, J. Kim, R.M. Wallace, University of Texas at Dallas
5:20pm EM-TuA11
Nonvolatile Memresistive Nano-Crossbar Switches in Pt/Ta2O5/Cu Solid Electrolytes
Pragya Shrestha, K.P. Cheung, National Institute of Standards and Technology (NIST), H. Baumgart, Old Dominion University
5:40pm EM-TuA12
Metrology for Interfaces and Mass Transport in C-MOS Related Nanofilms
A. Herrera-Gomez, Araceli Sanchez-Martinez, O. Ceballos-Sanchez, M.O. Vazquez-Lepe, CINVESTAV-Unidad Queretaro, Mexico, P. Lysaght, SEMATECH