| AVS 55th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 1:40pm | TF-TuA1 Invited Paper ALD of High-k Gate Dielectrics on Si and Alternative Substrates J. Kim, H.C. Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, R.M. Wallace, University of Texas at Dallas |
| 2:20pm | TF-TuA3 ALD of High Dielectric Material LaMO3 (M = Y, Yb, Er) Using Metal Formamidinate Precursors H. Li, D.V. Shenai, Rohm and Haas Electronic Materials, R.G. Gordon, Harvard University |
| 2:40pm | TF-TuA4 Electrical Properties of Plasma-Enhanced Atomic Layer Deposition HfO2/HfOxNy/HfO2 Gate Oxide W.J. Maeng, H. Kim, POSTECH, Korea Republic |
| 3:00pm | TF-TuA5 Improvement of the Electrical Characteristics of Amorphous LaAlO3 Films Made By Atomic Layer Deposition Y. Liu, H. Kim, J.J. Wang, R.G. Gordon, Harvard University, H. Li, D.V. Shenai, Rohm and Haas Electronic Materials |
| 4:00pm | TF-TuA8 In-situ Conductance Measurements during Transparent Conductive Zinc Oxide Film Growth using Low Temperature Atomic Layer Deposition J.-S. Na, G.N. Parsons, North Carolina State University |
| 4:20pm | TF-TuA9 ALD Noble Metal Oxides - Film Growth and Stability Studies M. Ritala, J. Hämäläinen, M. Heikkilä, K. Kukli, J. Niinistö, M. Kemell, M. Leskelä, University of Helsinki, Finland |
| 4:40pm | TF-TuA10 Increasing the Glass Cracking Resistance by Atomic Layer Deposition M. Putkonen, P. Soininen, M. Rajala, Beneq Oy, Finland, T. Mäntylä, Tampere University of Technology, Finland |
| 5:00pm | TF-TuA11 In Situ Gas Phase Absorption Measurements During Hafnium Oxide ALD J.E. Maslar, W.A. Kimes, J.T. Hodges, B. Sperling, D.R. Burgess, E.F. Moore, National Institute of Science and Technology |
| 5:20pm | TF-TuA12 Application of HRBS (High-resolution Rutherford Backscattering Spectrometry) to Elemental Depth Profiling of Advanced Gate Stack for Complementary Metal Oxide Semiconductor Devices C. Ichihara, Kobe Steel, Ltd., Japan, S. Yasuno, Kobelco Research Institute Inc., Japan, H. Takeuchi, ATDF, A. Kobayashi, S. Mure, Kobe Steel, Ltd., Japan, K. Fujikawa, K. Sasakawa, Kobelco Research Institute Inc., Japan |