| AVS 55th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuA |
| Session: | Applications of ALD II |
| Presenter: | J. Kim, University of Texas at Dallas |
| Authors: | J. Kim, University of Texas at Dallas H.C. Kim, University of Texas at Dallas B. Lee, University of Texas at Dallas A. Hande, University of Texas at Dallas E.M. Vogel, University of Texas at Dallas M.J. Kim, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
For future high performance semiconductor device applications, it is critical to achieve a high quality gate dielectric with a high dielectric constant and excellent interface properties with semiconductor substrates such as GaAs, InGaAs and graphene in addition to Si. ALD has been considered as one of the most appropriate deposition techniques for high-k gate dielectrics without significant damage due to energetic particles and plasma. Due to its surface reaction nature, it is important to understand effects of reactants, such as precursors and oxidants, in conjunction with substrates on both interface and dielectric properties. Various materials characterization techniques including XPS, HRTEM, AFM, XRD, SIMS and RBS are used to investigate the physical properties of ALD derived metal oxide (Al2O3, HfO2 and La2O3) thin films on various substrates. In particular, our in-situ XPS half-cycle study provides an insight on variation of chemical composition and binding status at the both interface and dielectric during the first few cycles.