| AVS 55th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuA |
| Session: | Applications of ALD II |
| Presenter: | M. Ritala, University of Helsinki, Finland |
| Authors: | M. Ritala, University of Helsinki, Finland J. Hämäläinen, University of Helsinki, Finland M. Heikkilä, University of Helsinki, Finland K. Kukli, University of Helsinki, Finland J. Niinistö, University of Helsinki, Finland M. Kemell, University of Helsinki, Finland M. Leskelä, University of Helsinki, Finland |
| Correspondent: | Click to Email |
Noble metal oxide thin films gain interest over a broad range of application areas because of their attractive catalytic, optical, mechanical, electrical, and electrochemical properties. In integrated circuits, for example, high work function and structural similarity to high-k dielectrics make noble metal oxides potential electrode materials for capacitors and transistors. This presentation summarises our efforts in developing ozone based ALD processes for noble metal oxides. The consequences of the limited stability of noble metal oxides are also addressed using both high temperature XRD and chemical exposure experiments.