| AVS 54th International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1+NS-WeM1 Spectroscopic, Spatial, and Temporal Investigation of Fe Nanoparticle Synthesis by Through Thin Film Ablation A.R. Waite, University of Dayton, Air Force Research Laboratory and UTC, Inc., P.T. Murray, University of Dayton, J.G. Jones, Air Force Research Laboratory, E. Shin, University of Dayton, A.A. Voevodin, Air Force Research Laboratory |
| 8:20am | PS1+NS-WeM2 Size Manipulation and Control of Nanoparticles Produced from Atmospheric-Pressure Microplasmas N.A. Brunelli, K.P. Giapis, California Institute of Technology |
| 8:40am | PS1+NS-WeM3 Invited Paper Ionic Plasmas Yielding Novel-Structured and -Functional Nanocarbons R. Hatakeyama, T. Kaneko, W. Oohara, Y.F. Li, Tohoku University, Japan |
| 9:20am | PS1+NS-WeM5 Continuous-Flow Microplasma Synthesis of Metal Nanoparticles for Catalytic Growth of Carbon Nanotubes W.-H. Chiang, R.M. Sankaran, Case Western Reserve University |
| 9:40am | PS1+NS-WeM6 Low Temperature Growth of Single-Walled Carbon Nanotubes by Oxygen-Assisted Inductively Coupled Plasma Chemical Vapor Deposition C.-H. Hsiao, C.-H. Weng, Z.-Y. Juang, K.-C. Leou, C.-H. Tsai, National Tsing Hua University, Taiwan |
| 10:40am | PS1+NS-WeM9 Fabrication of Defect-Free and Diameter-Controlled Silicon Nanodisks for Future Quantum Devices by using Neutral Beam Etching T. Hashimoto, T. Kubota, C.H. Huang, Tohoku Univ., Japan, M. Takeguchi, National Inst. for Mtls Sci., Japan, K. Nishioka, Japan Adv. Inst. of Sci. and Tech., Y. Uraoka, T. Fuyuki, Nara Inst. of Sci. and Tech., Japan, I. Yamashita, Matsushita Electric Industrial Co., Ltd, Japan, S. Samukawa, Tohoku Univ., Japan |
| 11:00am | PS1+NS-WeM10 Parallel Writing of Complex Nanofeatures using Nanopantography L. Xu, A. Nasrullah, M. Jain, Z. Chen, V.M. Donnelly, D.J. Economou, P. Ruchhoeft, University of Houston |
| 11:20am | PS1+NS-WeM11 High Aspect Ratio Deep Trench Chamber and Process Development for Silicon Etch in DRAM Applications below 50 nm S. Wege, S. Barth, Qimonda Dresden, Germany, A. Kersch, Qimonda Munich, Germany, M. Reinicke, Dresden University of Technology, Germany, G. Wenig, Qimonda Munich, Germany, M. Rudolph, J. Sobe, A. Steinbach, Qimonda Dresden, Germany |
| 11:40am | PS1+NS-WeM12 Etch Selectivity and Surface Roughening of Polystyrene and Poly(methyl methacrylate) in Plasma Etching of Block Copolymers Y.-H. Ting, S.-M. Park, C.-C. Liu, X. Liu, F.J. Himpsel, P.F. Nealey, A.E. Wendt, University of Wisconsin-Madison |
| 12:00pm | PS1+NS-WeM13 Comparison between NF3 and CF4 Chemistries for the Selective Etching of SiGe Sacrificial Layers in a 300mm Chemical Dry Etching Reactor S. Borel, CEA-Leti MINATEC, France, C. Arvet, STMicroelectronics, D. Watanabe, Shibaura Mechatronics Corporation, Japan |