| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | TF+EM-WeA1 MOCVD Growth and Characterization of ZnGeN2-GaN Alloy Films Benthara Hewage Dinushi Jayatunga, K. Kash, Case Western Reserve University, M.D. Reza, H. Zhao, The Ohio State University, O. Ohanaka, R. Lalk, Case Western Reserve University, M. Zhu, J. Hwang, The Ohio State University |
| 2:40pm | TF+EM-WeA2 Device Quality β-Ga2O3 and Related Alloys by MOCVD A. Osinsky, Fikadu Alema, Agnitron Technology, Inc., Y. Zhang, A. Mauze, J.S. Speck, University of California, Santa Barbara, P. Mukhopadhyay, W. Schoenfeld, University of Central Florida |
| 3:00pm | TF+EM-WeA3 Invited Paper Development of the β-(AlxGa1-x)2O3/β-Ga2O3 (010) Heterostructures by Plasma-assisted Molecular Beam Epitaxy James Speck, University of California at Santa Barbara |
| 4:20pm | TF+EM-WeA7 Invited Paper Phase-Change Memory: A Quest from Material Engineering Towards the Device Performances Guillaume Bourgeois, G. Navarro, M.C. Cyrille, J. Garrione, C. Sabbione, M. Bernard, E. Nolot, E. Nowak, CEA-LETI, France |
| 5:00pm | TF+EM-WeA9 Neuromorphic Materials and Architectures for Dynamic Learning and Edge Processing Applications Angel Yanguas-Gil, Argonne National Laboratory |
| 5:20pm | TF+EM-WeA10 Atomic Layer Deposited VO2 Thin Films Towards Modulated Infrared Optoelectronic Devices Virginia Wheeler, C.T. Ellis, M. Currie, J.R. Avila, M.A. Meeker, A.J. Giles, U.S. Naval Research Laboratory, J.D. Caldwell, Vanderbilt University, J.G. Tischler, U.S. Naval Research Laboratory |
| 5:40pm | TF+EM-WeA11 Deposition Process for Vanadium Dioxide Thin Films for RF Applications Mark Lust, S. Chen, N. Ghalichechian, The Ohio State University |