AVS 66th International Symposium & Exhibition | |
Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | PS+AS+EM+SS+TF-MoA2 Plasma Resistance of Sintered Yttrium Oxyfluoride (YOF) with Various Y, O, and F Composition Ratios Tetsuya Goto, Y. Shiba, A. Teramoto, Tohoku University, Japan, Y. Kishi, Nippon Yttrium Co., Ltd, Japan, S. Sugawa, Tohoku University, Japan |
2:20pm | PS+AS+EM+SS+TF-MoA3 Invited Paper Understanding Atomic Layer Etching: Thermodynamics, Kinetics and Surface Chemistry Jane P. Chang, University of California, Los Angeles |
3:00pm | PS+AS+EM+SS+TF-MoA5 Comparison of Silicon Surface Chemistry between Photo-Assisted Etching and Ion-Assisted Etching Emilia Hirsch, L. Du, V.M. Donnelly, D.J. Economou, University of Houston |
3:20pm | PS+AS+EM+SS+TF-MoA6 Chemical Reaction Probabilities in the Etching of Si by Fluorine Atoms Produced in a Mixture of NF3/SF6 Plasma Priyanka Arora, T. Nguyen, University of Houston, S. Nam, Samsung Electronic Company, Republic of Korea, V.M. Donnelly, University of Houston |
4:00pm | PS+AS+EM+SS+TF-MoA8 Invited Paper John Thornton Memorial Award Lecture: Low Temperature Plasma-Materials Interactions: Foundations of Nanofabrication And Emerging Novel Applications At Atmospheric Pressure Gottlieb S. Oehrlein, University of Maryland, College Park |
4:40pm | PS+AS+EM+SS+TF-MoA10 Determining Surface Recombination Probabilities during Plasma-enhanced ALD using Lateral High Aspect Ratio Structures Karsten Arts, Eindhoven University of Technology, The Netherlands, M. Utriainen, VTT Technical Research Centre of Finland, R.L. Puurunen, Aalto University School of Chemical Engineering, Finland, W.M.M. Kessels, H.C.M. Knoops, Eindhoven University of Technology, The Netherlands |
5:00pm | PS+AS+EM+SS+TF-MoA11 Study of Plasma-Photoresist Interactions for Atomic Layer Etching Processes Adam Pranda, K.-Y. Lin, G.S. Oehrlein, University of Maryland, College Park |