AVS 66th International Symposium & Exhibition, Session EM+2D+AS+MI+MN+NS+TF-WeM

AVS 66th International Symposium & Exhibition
Electronic Materials and Photonics Division	Wednesday Sessions

Session EM+2D+AS+MI+MN+NS+TF-WeM
Nanostructures and Nanocharacterization of Electronic and Photonic Devices

Wednesday, October 23, 2019, 8:00 am, Room A214
Moderators: Sang M. Han, University of New Mexico, Jason Kawasaki, University of Wisconsin - Madison

Click here to Download program book for this session
in Adobe Acrobat format

Click a paper to see the details. Presenters are shown in bold type.

8:00am	EM+2D+AS+MI+MN+NS+TF-WeM1 Photonic Thermal Conduction in Semiconductor Nanowires E.J. Tervo, M.E. Gustafson, Z.M. Zhang, B.A. Cola, Michael A. Filler, Georgia Institute of Technology
8:20am	EM+2D+AS+MI+MN+NS+TF-WeM2 Electric Field-Induced Defect Migration and Dielectric Breakdown in ZnO Nanowires Hantian Gao, M. Haseman, Department of Physics, The Ohio State University, H. von Wenckstern, M. Grundmann, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, L.J. Brillson, The Ohio State University
8:40am	EM+2D+AS+MI+MN+NS+TF-WeM3 Characterization of SiGe/Si Multilayer FIN Structures using X-Ray Diffraction Reciprocal Space Maps Roopa Gowda, M. Korde, SUNY Polytechnic Institute, M. Wormington, Jordan Valley Semiconductors Inc., A.C. Diebold, V. Mukundan, SUNY Polytechnic Institute
9:00am	EM+2D+AS+MI+MN+NS+TF-WeM4 Nanoscale Depth and Lithiation Dependence of V₂O₅ Band Structure by Cathodoluminescence Spectroscopy Mitchell Walker, N. Pronin, The Ohio State University, A. Jarry, J. Ballard, G.W. Rubloff, University of Maryland, College Park, L.J. Brillson, The Ohio State University
11:00am	EM+2D+AS+MI+MN+NS+TF-WeM10 Hot Electron Emission from Waveguide Integrated Graphene Ragib Ahsan, F.R. Rezaeifar, H.U. Chae, R. Kapadia, University of Southern California
11:20am	EM+2D+AS+MI+MN+NS+TF-WeM11 Imaging Candidate Nanoelectronic Materials with Photoemission Electron Microscopy (PEEM) Sujitra Pookpanratana, S.W. Robey, National Institute of Standards and Technology (NIST), T. Ohta, Sandia National Laboratories
11:40am	EM+2D+AS+MI+MN+NS+TF-WeM12 Comparison of Features for Au and Ir Adsorbed on the Ge (110) Surface Shirley Chiang, University of California, Davis, R.K. Xie, H.Z. Xing, Donghua University, China, T.S. Rahman, University of Central Florida, C.Y. Fong, University of California, Davis
12:00pm	EM+2D+AS+MI+MN+NS+TF-WeM13 Reference Materials for Localization Microscopy C.R. Copeland, R.G. Dixson, L.C.C. Elliott, B.R. Ilic, National Institute for Science and Technology (NIST), D. Kozak, K.-T. Liao, FDA, National Institute for Science and Technology (NIST), J.A. Liddle, NIST Center for Nanoscale Science and Technology, A.C. Madison, National Institute for Science and Technology (NIST), J.-H. Myung, FDA, A. Pintar, Samuel Stavis, National Institute for Science and Technology (NIST)