| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+2D+AS+MI+MN+NS+TF-WeM |
| Session: | Nanostructures and Nanocharacterization of Electronic and Photonic Devices |
| Presenter: | Roopa Gowda, SUNY Polytechnic Institute |
| Authors: | R.G. Gowda, SUNY Polytechnic Institute M. Korde, SUNY Polytechnic Institute M. Wormington, Jordan Valley Semiconductors Inc. A.C. Diebold, SUNY Polytechnic Institute V. Mukundan, SUNY Polytechnic Institute |
| Correspondent: | Click to Email |
Nanowire and Nanosheet FET’s are potential replacements for FinFET’s, mainly beyond sub-10nm CMOS technology nodes, as gate-all-around (GAA) FET device architecture provides improved electrostatics in higher on current (I on) and better subthreshold swing. As GAA is one of the best promising device for logic applications for future technology nodes, there is an increased need of characterization technique for such multilayer Si1-xGex/ Si complex structures. We studied Si1-xGex/Si/Si1-xGex/Si/Si1-xGex/Simultilayer FIN structures using X-Ray Diffraction Reciprocal Space Maps (RSM). RSM is one of the most popular technique to study epitaxial thin-films nanostructures due to straightforward analysis of the data. We found RSM simulations showing sensitivity of nanosheet fin structures dimensions such as pitch-walk (PW), Nanosheet thickness (NST), composition and shape. RSM’s provide better means to interpret more complex diffraction measurements than real space constructions. RSMs of Si1-xGex/Si multilayer structure has been simulated using Bruker JV-RADS v6.5.50/HRXRD software. 1D line profiles extracted from RSMs was also used for the analysis of nanostructures dimensions. We obtained multilayer structure dimensions from the published information. We studied the influence of nanostructure parameters PW, NST, Composition and shape on RSMs. Imperfect periodic structures impact the intensity modulation of the grating rods (GRs). We observed that satellite peaks intensity reduces and harmonics peaks intensity enhances as PW increases. Rate of intensity change in higher order peaks is much faster than the lower harmonic peaks. We observed that the spacing between adjacent interference fringes in RSMs is related to the thickness of the layers. The period of fringes is inversely proportional to the thickness of the layer, hence total FIN height can be determined. 1D line profiles along Qz shows decreased angular width and increase in intensity of the layer peak and interference fringes as NST increases. Symmetric 004 longitudinal RSMs and their line profiles clearly show layer peak shift from substrate peak as composition increases due to increase of SiGe lattice spacing along the growth direction. Cross-shaped GR pattern in RSMs is observed which is due to trapezoidal surface grating caused by SWA. Line profiles indicate that fin shapes influence the modulation of the GRs as a function of Qx. We demonstrate the characterization of complex Si1-xGex/ Si multilayers using RSMs and their line profiles which are relevant for lateral nanowire and nanosheet FETs. Above findings from RSM simulations clearly indicate the influence of variations in structural dimensions.