AVS 66th International Symposium & Exhibition
    Thin Films Division Tuesday Sessions
       Session TF-TuA

Paper TF-TuA7
Selective Deposition by Fast-ALD of Transparent Conductive Metal Oxides for Application in Organic (opto)electronic Devices

Tuesday, October 22, 2019, 4:20 pm, Room A122-123

Session: Emerging Applications for Thin Films
Presenter: Tony Maindron, CEA-LETI, France
Authors: M. Granados, LMGP, France
D. Munoz-Rojas, LMGP, France
c. fontelaye, CEA-LETI, France
G. Nonglaton, CEA-LETI, France
T. Maindron, CEA-LETI, France
Correspondent: Click to Email
Future’s demands for new TCOs are driven by new developments made toward the realization of displays onto temperature-sensitive plastic substrates, transparent displays, as well as sensor arrays for bio-healthcare applications. With regard to the realization of TCOs, the Atomic Layer Deposition (ALD) technology is well adapted since it allows the realization of high quality materials at low temperatures, together with a digital control of thickness. In the meantime, multicomponent film growth can be reproducible and highly controllable even on large substrates, with the self-limiting reaction of ALD offering great benefits to many materials. The mainstream TCO deposited by ALD today is by far ZnO, as well as its derivatives (ZnO:Al; ZnO:Sn; ZnO: In…). Unfortunately, the ALD of ZnO suffers from two major drawbacks: (i) ALD is a very low throughput technique and (ii) ZnO-based materials are very sensitive to moisture (environmental and during microfabrication processes). Fast-ALD is an alternative new generation high-throughput process that will be approached in this work to make TCO films, to solve issue (i). In the meantime, Area Selective Deposition (ASD) strategies based on the use of vapor-deposited SAMS (Self Assembled Monolayers) will be investigated to selectively deposit the materials. Doing so, this work will leverage the use of intensive photolithography/etching processes of ZnO, to solve issue (ii). A future perspective of this work is to provide innovative fast-ASD deposited TCO-based TFT architectures.