AVS 66th International Symposium & Exhibition | |
Thin Films Division | Tuesday Sessions |
Session TF-TuA |
Session: | Emerging Applications for Thin Films |
Presenter: | Katherine Burzynski, University of Dayton |
Authors: | K.M. Burzynski, University of Dayton N.R. Glavin, Air Force Research Laboratory E.M. Heckman, Air Force Research Laboratory C. Muratore, University of Dayton |
Correspondent: | Click to Email |
Consumers and military personnel alike are demanding ubiquitous electronic devices which require enhanced flexibility and conformality of electronic materials and packaging, while maintaining device performance. Whether it be high-power devices for faster data speeds, such as fifth generation (5G) wireless communication technology or wearable sensors to facilitate the Internet of Things (IoT), the age of flexible, high performance electronic devices has begun. Managing the heat from flexible electronics is a fundamental challenge. Even on rigid substrates with significantly higher thermal conductivity than polymeric and other flexible substrates, the full potential of semiconducting materials is often thermally limited. The flexible gallium nitride (GaN) high electron mobility transistors (HEMTs) employed in this work are conventionally processed devices that can be released from their growth substrate and transferred to a variety of rigid and flexible substrates. Characterization of the GaN device behavior on the as-grown sapphire wafers (prior to transfer) provide a baseline for evaluation of the thermal performance of engineered interfaces and substrates. With conventional substrates, device performance (specifically, the saturation current) is reduced when the device is transferred to polymeric substrates. The thermal dissipation is further restricted due to the addition of an adhesive layer to the substrate. Thermal imaging of devices in operation reveals that the current passing through an as-grown GaN transistor on a sapphire wafer reaches the target operating temperature at approximately five times the power of the same device transferred to a flexible substrate. Printable, thermally conductive nanocomposites integrating 1D, 2D, and 3D forms of carbon in a flexible polymer matrix, as well as metal nanoparticles, were developed to maximize heat transfer from electronic devices. The thermal conductivity of the candidate substrate materials was measured experimentally to have more than a 900 percent increase in thermal conductivity (from 0.2 to 1.7 W/mK), while maintaining desirable mechanical properties. The performance of devices transferred to these novel flexible composite substrates was characterized and used in computational simulations to predict flexible substrate architectures that effectively promote point-to-volume heat transfer to further improve device performance. Additive manufacturing for engineered architectures of the flexible, thermally conductive substrate materials was demonstrated to substantially reduce the thermal limitation of high-power flexible electronics.