| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Kinsey Canova, University of Illinois at Urbana-Champaign |
| Authors: | K. Canova, University of Illinois at Urbana-Champaign G.S. Girolami, University of Illinois at Urbana-Champaign J.R. Abelson, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
Fabrication of device interconnects in the high aspect ratio features of modern electronics requires highly conformal, electrically conductive films. HfB2 is a metallic ceramic which can be deposited with excellent conformality at low temperatures using the single-source CVD precursor Hf(BH4)4; conformality is due to the kinetic saturation of growth rate at precursor pressures of a few mTorr. Here we report the conformal growth of Hf1-xVxB2 alloys by adding a co-flow of the vanadium precursor V[N(CH3)2]4. This alloy is of special interest for its reported superconducting transition near 7 K.
Alloy compositions previously investigated were limited to the solubility limit of ~ 4 % V in HfB2. In our low-temperature process, however, metastable compositions with excess V can be obtained, and the film stoichiometry x is controlled by relative reaction rates of the two precursors. We report the compositional variation versus precursor flux, which is then used to develop a kinetic model of growth based on the adsorption and reaction rates for both precursors. This model is extended to estimate compositional variation vs. depth z in a deep trench and tested by coating macro-trenched substrates. We also report the electrical resistivity from ambient to cryogenic temperatures.