| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Wei-Chun Chen, Taiwan Instrument Research Institute, Taiwan |
| Authors: | C.-T. Lee, Taiwan Instrument Research Institute, Taiwan W.-C. Chen, Taiwan Instrument Research Institute, Taiwan H.-P. Chen, Taiwan Instrument Research Institute, Taiwan C.-C. Jaing, Minghsin University of Science and Technology, Japan |
| Correspondent: | Click to Email |
Stacked MoO3/Ag/Mo/MoO3 (MAMM) films were deposited on glass substrate as ITO-free and electrochromic applications. The effects of the thickness of Mo layer on the electrical and optical properties of the MAMM films were examined by the four-point probe system and a spectrophotometer. The resistivity of MAMM films was decreased with increasing the thickness of Mo layer. The resistivity of the films were 5000 and 3X10-5 Ω/cm when the thickness of Mo layer was 1 and 2 nm, respectability. It was found that the ITO-free MAMM film as the Mo layer is over 2 nm. The luminous transmittance of MAMM films was decreased with increased the thickness of Mo layer. After the optical simulated, and prepared the electrochromic MAMM films, the MAMM films for hot-mirror and electrocromic applications was also investigated.