| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Chao-Te Lee, Taiwan Instrument Research Institute, Taiwan |
| Authors: | C.-T. Lee, Taiwan Instrument Research Institute, Taiwan Y.-H. Yu, Taiwan Instrument Research Institute, Taiwan W.-H. Cho, Taiwan Instrument Research Institute, Taiwan W.-C. Chen, Taiwan Instrument Research Institute, Taiwan H.-P. Chen, Taiwan Instrument Research Institute, Taiwan |
| Correspondent: | Click to Email |
The IrO2/Pt films were prepared on Si substrate by pulsed-dc magnetron sputtering and plasma-enhanced atomic layer deposition (PEALD), respectively. The IrO2 film was prepared from a high purity Ir target and deposited on Si substrate at room temperature with various working pressure, gas ratio (Ar/O2 ratio) and pulse frequencies (10~100 kHz) by a pulsed-dc magnetron sputtering. Effects of process parameters on the film composition, microstructure, surface roughness, and electrical properties were investigated by field emission scanning electron microscopy with energy dispersive X-ray spectroscopy (FESEM-EDX), X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and cyclic voltammetry (CV) measurement, respectively. The nanoblade structure of the IrO2 film was prepared at a working pressure was 20 × 10−3 Torr, and Ar/O2 rate was 10. The Pt film was prepared on the nanoblade structure of IrO2 film by PEALD. Effects of plasma power, and thickness on the microstructure, and electrical properties of the IrO2/Pt films were investigated. The research goal is to obtain high charge delivery capacity (CDC) of the film. It is expected that the high quality IrO2/Pt film can be explicated in biomedical technology.