Paper TF-ThP14
Growth of Hafnium Oxide and Zirconium Oxide for the Fabrication of Electronic Devices Using Plasma-Enhanced Atomic Layer Deposition

Thursday, October 24, 2019, 6:30 pm, Room Union Station B

Hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) have been used widely as the gate oxide in the fabrication of integrated circuits (ICs) because of their high dielectric constants. In this research, we report the growth of hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) thin film using plasma-enhanced atomic layer deposition (PEALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the PEALD-grown HfO and ZrO thin films as the gate oxide. The PE-ALD-grown films were analyzed using high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). MOSFETs, CMOS inverters, and CMOS ring oscillator were fabricated, and the electrical properties of the fabricated devices were measured. The measurement results on the devices fabricated with the two films were compared.