AVS 66th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP12
Kinetically Stabilized Growth of InN by MEPA-MOCVD

Thursday, October 24, 2019, 6:30 pm, Room Union Station B

Session: Thin Films Poster Session
Presenter: G. Brendan Cross, Georgia State University
Authors: G.B. Cross, Georgia State University
Z. Ahmad, Georgia State University
D. Seidlitz, Technische Universität Berlin, Germany
M. Vernon, Georgia State University
A.Y. Kozhanov, Georgia State University
Correspondent: Click to Email
We report on kinetically stabilized indium nitride grown on sapphire and gallium nitride, by migration enhanced plasma assisted metal organic chemical vapor deposition (MEPA-MOCVD). Deposition is studied over a range of temperatures, pressures, flows and plasma power, outside the range of indium nitride grown in conventional MOCVD. Raman and FTIR spectroscopy, XRD and atomic force microscopy are used to explore the crystalline quality, growth rate, and surface morphology change with these parameters.