AVS 66th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP1
Oxygen Partial Pressure Dependence of Structural and Photoluminescence Properties in Eu3+ doped Tantalum based Double-perovskite Thin Film

Thursday, October 24, 2019, 6:30 pm, Room Union Station B

Session: Thin Films Poster Session
Presenter: Jung Hyun Jeong, Pukyong National University, Republic of Korea
Authors: J.H. Jeong, Pukyong National University, Republic of Korea
J.H. Oh, Pukyong National University, Republic of Korea
B.C. Choi, Pukyong National University, Republic of Korea
J.H. Kim, Pukyong National University, Republic of Korea
S.Y. Seo, Pukyong National University, Republic of Korea
K. Jang, Changwon National University, Republic of Korea
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In this study, we investigated the structural and photoluminescence properties of Eu3+ doped SrLaMgTaO6 (SLMTOE) double-perovskite thin films depending on the oxygen partial pressure. The X-ray diffraction patterns were examined to determine the growth behaviors of the SLMTOE films on the SrTiO3 (100) substrates. In the oxygen partial pressure range of 10-200 mTorr, the SLMTOE thin films were aligned with the SrTiO3 (001) substrate. The SLMTOE films grown at 100 mTorr have a low crystallinity but emitted the strongest red light corresponding to 5D0-7F2 transition (Eu3+). Based on this sample, the behavior of PL intensity was different at low oxygen partial pressure (10-100 mTorr) and high oxygen partial pressure (100-200 mTorr). To figure out the different PL intensity behavior, we performed the x-ray photoelectron spectroscopy (XPS). Our XPS result implies that the enhancement of PL intensity at low partial pressures is associated with defects in the thin film lattice, and the weakening of PL intensity at high partial pressures is due to the change in the ratio of Eu3+ to Eu2+ by the self-reduction process.