AVS 66th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF+AS+EL+PS+RA-ThA

Invited Paper TF+AS+EL+PS+RA-ThA10
Visualization of Ultrafast Charge Motion in Thin Films via THz Emission Spectroscopy

Thursday, October 24, 2019, 5:20 pm, Room A124-125

Session: Characterization of Thin Film Processes and Properties
Presenter: Aaron Lindenberg, Stanford University
Correspondent: Click to Email

We describe a method for probing ultrafast time-dependent currents in thin films and heterostructures by recording the associated emitted electromagnetic fields. This detection scheme offers direct sensitivity to the flow of charges at the atomic-scale and enables a real-time probe for investigating ultrafast charge transfer processes at molecular interfaces. Applied to transition metal dichalcogenide heterostructures having a staggered (Type-II) band alignment, we observe a burst of electromagnetic radiation at terahertz frequencies following above gap excitation. The emitted electric field transients encode information about the charge transfer within the heterostructure. The polarity of the emitted field reflects the direction of the charge transfer and the polarity is reversed as the order of the bilayer within the heterostructure is altered. We find that the charge transfer proceeds at an ultrafast rate (~100 fs) indicating a remarkable efficiency for the charge separation across these atomic-scale bilayers.

We will also describe initial experiments and coupled theoretical efforts probing charge separation and ultrafast photovoltaic responses in multiferroic BFO periodic domain structures. We show that charge separation occurs dominantly at the domain walls and provide a quantitative estimate of the efficiency of this process.