AVS 66th International Symposium & Exhibition
    Thin Films Division Tuesday Sessions
       Session TF+AP-TuM

Paper TF+AP-TuM5
Electron Enhanced Atomic Layer Deposition (EE-ALD) of Cobalt Films and Development of New Hollow Cathode Plasma Electron Source

Tuesday, October 22, 2019, 9:20 am, Room A124-125

Session: ALD and CVD: Precursors and Process Development
Presenter: Zachary Sobell, CU Boulder
Authors: Z. Sobell, CU Boulder
A.S. Cavanagh, University of Colorado at Boulder
S.M. George, University of Colorado at Boulder
Correspondent: Click to Email

Cobalt films were grown with electron enhanced atomic layer deposition (EE-ALD) at room temperature using sequential surface reactions. The Co film growth was performed using sequential cobalt tricarbonyl nitrosyl (CTN, Co(CO)3NO) exposures and low energy (75-175 eV) electrons. A hot filament electron flood gun was used as the electron source. The electrons desorb the CO and NO ligands from CTN on the surface and produce active sites for additional CTN adsorption. The maximum growth rate was 0.5 Å per cycle at an electron energy of 125 eV. Cobalt is important as an advanced interconnect material to replace copper or tungsten. Because the electron flux is normal to the substrate, Co EE-ALD may be used to facilitate bottom-up-fill of trenches and vias.

One difficulty with Co EE-ALD using the electron flood gun is the long cycle times of 540 seconds. Much of this cycle time is consumed protecting the flood gun filament from precursor exposures and the long duration of the electron exposure due to the limited current of the gun. 42% of the cycle time is needed for the warm up and cool down of the filament of the electron flood gun between CTN exposures. Another 44% of the cycle time is required for the electron exposures. An additional 14% of the cycle time is needed to reduce the precursor pressure in the chamber following CTN exposures. The cycle time could be reduced significantly using a more robust and higher flux electron source.

A new hollow cathode plasma electron source (HC-PES) has been developed to reduce the cycle time during EE-ALD. The HC-PES has a >100X increase in electron flux compared with the electron flood gun. The HC-PES also eliminates the warm-up and cool-down time of the filament of the electron flood gun. The electron current from the HC-PES can be switched from nanoamps to miliamps in < 10 ms. The HC-PES is also chemically insensitive and reduces the need for pumping out the chamber following CTN exposures. This presentation will report on the characterization of this new HC-PES and its use for Co EE-ALD.