AVS 66th International Symposium & Exhibition
    Plasma Science and Technology Division Monday Sessions
       Session PS2-MoM

Paper PS2-MoM5
Capacitively Coupled Plasma Uniformity Improvement Using Phase and Amplitude Control of Electrode Potential

Monday, October 21, 2019, 9:40 am, Room B130

Session: Plasma Modeling
Presenter: Xiaopu Li, Applied Materials
Authors: X. Li, Applied Materials
K. Bera, Applied Materials
S. Rauf, Applied Materials
Correspondent: Click to Email

Capacitively coupled plasmas (CCPs) are widely used for semiconductor material processing to provide uniform active neutral and ion fluxes and their energies that lead to on-wafer process uniformity. High density discharge at Very High Frequency (VHF) is required to produce enough reactive radicals for Plasma Enhanced- Chemical Vapor Deposition (PE-CVD), Atomic Layer Deposition (PE-ALD) and Atomic Layer Etching (PE-ALE). However, the uniformity of discharge profile is strongly affected by both electrostatic coupling and electromagnetic standing wave effects that depend on reactor design and operating conditions. Consequently, it is challenging to achieve adequate on-wafer uniformity using high-density discharge that utilizes high power density. Electric potential modulation has been proposed for the uniformity control of VHF CCPs using external circuits [1], and separate power sources [2]. In the present work, a compact size reactor is modeled with parallel plate electrodes and grounded chamber walls at moderately high pressure driven by power in kWs. The amplitudes and phases of electrode potentials are modulated by external circuits or two separate power sources. The discharge profile is systematically investigated by a fluid-based plasma model using Ar discharge [3]. This study demonstrates a tunable plasma profile using phase and amplitude control of electrode potential, which is important to achieve flexible uniformity control in high-density VHF CCPs.

1. Bera, K., et al. IEEE Transactions on Plasma Science 38.11 (2010): 3241-3248.

2. Bera, K., et al. Journal of Applied Physics 106.3 (2009): 033301.

3. Agarwal, A., et al. J. Phys. D: Appl. Phys. 50 (2017): 424001 (13pp).