AVS 66th International Symposium & Exhibition
    Plasma Science and Technology Division Monday Sessions
       Session PS2-MoM

Invited Paper PS2-MoM3
Investigation on the Uniformity Control of the Electron and the Ion Kinetics in a Capacitively Coupled Plasma Reactor using a Parallelized Particle-in-Cell Simulation

Monday, October 21, 2019, 9:00 am, Room B130

Session: Plasma Modeling
Presenter: Hae June Lee, Pusan National University, Republic of Korea
Authors: H.J. Lee, Pusan National University, Republic of Korea
H.J. Kim, Dong A Uiversity, Republic of Korea
J.S. Kim, Tokyo Electron Technology Solutions Limited, Japan
Correspondent: Click to Email
The radially non-uniform power absorption in a capacitively coupled plasma (CCP) causes non-uniform plasma density and temperature which results in the spatial variations of etching or deposition profiles. In this study, we investigate the electron energy probability function (EEPF) in the bulk plasma and the ion energy and angle distribution function (IEADF) on the substrate using a two-dimensional particle-in-cell simulation. The spatial variation of the EEPFs and the IEADFs are observed with the variation of the electrode structure and the gas pressure. The non-uniform transition of the heating mode from stochastic heating to Ohmic heating was observed to be enhanced with the side wall effect in CCP deposition reactors. While the ionization rate is affected by the heating mode transition and the electron density, the IEADFs are mainly affected by the time-average potential profiles for a single high-frequency CCP. However, the dual frequency CCP has more variety for the control of the IEADF uniformity.