| AVS 66th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Wednesday Sessions |
| Session PS-WeA |
| Session: | Commemorating the Career of John Coburn (ALL INVITED SESSION) |
| Presenter: | Erwin Kessels, Eindhoven University of Technology, The Netherlands |
| Authors: | K. Arts, Eindhoven University of Technology, The Netherlands V. Vandalon, Eindhoven University of Technology, The Netherlands H.C.M. Knoops, Eindhoven University of Technology, The Netherlands W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| Correspondent: | Click to Email |
The profound contributions of John Coburn and Harold Winters to the field of plasma etching have inspired us at the Eindhoven University of Technology to study the mechanisms of plasma deposition [1]. In the last two decades our interest has mainly focused on the surface reactions during atomic layer deposition (ALD), especially on those during plasma-enhanced ALD (also referred to as plasma ALD or radical-enhanced ALD). In his late work, John Coburn has also worked on radical-enhanced ALD, more particularly on radical-enhanced ALD of TiN as investigated by fundamental beam studies [2]. As in his work on plasma etching, a lot of attention was given to the determination of sticking and reaction probabilities as quantitative knowledge of these parameters is key to gain a detailed understanding of the ruling reaction mechanisms. Moreover, quantitative information is needed for modelling purposes. In this contribution, some of our recent work on the determination of sticking and recombination probabilities during (plasma) ALD will be presented. Data obtained from broadband sum-frequency generation [3] and thin film conformality studies [4] will be reported and mechanisms underlying the ALD processes will be discussed.
[1] https://www.atomiclimits.com/2017/11/25/surface-science-aspects-of-plasma-ald-reactions-extending-the-legacy-of-harold-winters/
[2] F. Greer, D. Fraser, J.W. Coburn, and D.B. Graves, J. Vac. Sci. Technol. A 21, 96 (2003)
[3] V. Vandalon and W. M. M. Kessels, J. Vac. Sci. Technol. A 35, 05C313 (2017).
[4] K. Arts, V. Vandalon, R.L. Puurunen, M. Utriainen, F. Gao, W.M.M. Kessels, and H.C.M. Knoops, J. Vac. Sci. Technol. A 37, 030908 (2019)