| AVS 66th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
| Session PS-ThM |
| Session: | Plasma Diagnostics and Sources II |
| Presenter: | Ghewa Akiki, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, France |
| Authors: | G. Akiki, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, France E.V. Johnson, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, France P. Bulkin, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, France D. Daineka, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris |
| Correspondent: | Click to Email |
Research in the field of area selective deposition currently focuses on the use of Atomic Layer Deposition (ALD) technique, and requires an initial nucleation delay between two different substrates, as well as a "passivation" step, namely a plasma etching step that resets the nucleation delay for one surface [1]. In analogy, we aim to demonstrate a Plasma Enhanced Chemical Vapor Deposition (PECVD) based approach using a non-sinusoidal voltage waveform [2] to excite an Ar/SiF4/H2 plasma. This plasma chemistry is believed to be a key ingredient to creating a varying nucleation delay as the surface processes depend on the deposition/etching balance controlled by the H2 flow rate [3]. As a building block for our PECVD based approach, we report on the observation of a nucleation delay for a PECVD process for microcrystalline silicon films on two different substrates, first using a standard 13.56 MHz radio frequency excitation source. The deposition selectivity on a patterned chip containing both SiNx and AlOx areas as well as the influence of the plasma parameters, will be presented. The analysis is performed by comparing ex-situ ellipsometry spectra before and after deposition and by Scanning Electron Microscopy (SEM) micrographs.
[1] R. Vallat, R. Gassilloud, B. Eychenne, and C. Vallée, J. Vac. Sci. Technol. A 35, 01B104 (2017)
[2] J. Wang and E.V. Johnson, Plasma Sources Sci. Technol. 26 (2017) 01LT01
[3] Dornstetter JC, Bruneau B, Bulkin P, Johnson EV, Roca i Cabarrocas P, J. Chem. Phys. 140, 234706 (2014).