| AVS 66th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Friday Sessions |
| Session PS+2D+SE+TF-FrM |
| Session: | Plasma Deposition and Plasma-Enhanced Atomic Layer Deposition |
| Presenter: | Erwin Kessels, Eindhoven University of Technology, The Netherlands |
| Authors: | T.F. Faraz, Eindhoven University of Technology, The Netherlands K. Arts, Eindhoven University of Technology, The Netherlands L. Martini, Eindhoven University of Technology, The Netherlands R. Engeln, Eindhoven University of Technology, The Netherlands H.C.M. Knoops, Eindhoven University of Technology, The Netherlands W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| Correspondent: | Click to Email |
Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. Plasma-based processing remains key in next-generation device manufacturing with plasma-enhanced atomic layer deposition (PE-ALD or plasma ALD) being a method that has obtained a very prominent position in obtaining ultrathin films with atomic scale precision [1]. In this contribution the state-of-the-art of PE-ALD will be presented including latest insights into reaction mechanisms as well as some developments in plasma ALD equipment and emerging applications. Aspects such as the role of (energetic) ions, conformality in high aspect ratio structures, and selective processing will be discussed [2].
[1] H.C.M. Knoops, T. Faraz, K. Arts, and W.M.M. Kessels, J. Vac. Sci. Technol. A 37, 030902 (2019)
[2] T. Faraz, K. Arts, S. Karwal, H.C.M. Knoops, and W.M.M. Kessels, Plasma Sources Sci. Technol. 28, 024002 (2019).