| AVS 66th International Symposium & Exhibition | |
| Advanced Ion Microscopy and Ion Beam Nano-engineering Focus Topic | Wednesday Sessions |
| Session HI+AS+CA-WeA |
| Session: | Advanced Ion Microscopy and Surface Analysis Applications |
| Presenter: | Hussein Hijazi, Rutgers University |
| Authors: | H. Hijazi, Rutgers University C. Feldman, Rutgers University R. Thorpe, Rutgers University M. Li, Rutgers University T. Gustafsson, Rutgers University D. Barbacci, Ionwerks A. Schultz, Ionwerks |
| Correspondent: | Click to Email |
The helium ion microscope (HIM) has become a unique tool for modern materials science due to its high lateral resolution for imaging, high spatial resolution and nano-scale analysis. For crystalline materials, the incident beam may undergo ion channeling, which strongly modifies all of the basic ion-solid interactions associated with these HIM functions. Here, a 30 keV He+ beam was used for RBS channeling in a W(111) crystal using a novel time of flight (HIM/TOF) detector developed at Rutgers University to extract critical channeling parameters. Measurements of the minimum backscattering yield (χmin), surface peak (SP), and critical angle, are compared to several theoretical estimates. The results illustrate the advantage of using channeling in a backscattering mode to characterize crystalline materials with the HIM, as the backscattering intensity modifications are far greater for scattered ions than for secondary electrons. This case of “ideal” channeling with the HIM now provides a basis for analysis of more complex materials such as polycrystalline materials and textured structures, and quantifies the role of HIM induced materials modification in crystalline materials.